Journal ArticleDOI
Empirical spds^* tight-binding calculation for cubic semiconductors : general method and material parameters
TLDR
In this paper, an empirical tight-binding method for tetrahedrally coordinated cubic materials is presented and applied to group-IV and III-V semiconductors, and the method extends existing calculations by the inclusion of all five $d$ orbitals per atom in the basis set.Abstract:
An empirical tight-binding method for tetrahedrally coordinated cubic materials is presented and applied to group-IV and III-V semiconductors. The present ${\mathrm{spds}}^{*}$ method extends existing calculations by the inclusion of all five $d$ orbitals per atom in the basis set. On-site energies and two-center integrals between nearest neighbors in the Hamiltonian are fitted to measured energies, pseudopotential results, and the free-electron band structure. We demonstrate excellent agreement with pseudopotential calculations up to about 6 eV above the valence-band maximum even without inclusion of interactions with more distant atoms and three-center integrals. The symmetry character of the Bloch functions at the $X$ point is considerably improved by the inclusion of $d$ orbitals. Density of states, reduced masses, and deformation potentials are correctly reproduced.read more
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A review on silicene - New candidate for electronics
Abdelkader Kara,Abdelkader Kara,Hanna Enriquez,Ari P. Seitsonen,L. C. Lew Yan Voon,Sébastien Vizzini,Bernard Aufray,Hamid Oughaddou,Hamid Oughaddou +8 more
TL;DR: In this paper, the existence of silicene has been achieved recently owing to experiments involving epitaxial growth of silicon as stripes on Ag (001), ribbons on Ag(110), and sheets on Ag((111) ).
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QuantumATK: an integrated platform of electronic and atomic-scale modelling tools.
Søren Smidstrup,Troels Markussen,Pieter Vancraeyveld,Jess Wellendorff,Julian Schneider,Tue Gunst,Tue Gunst,Brecht Verstichel,Daniele Stradi,Petr Khomyakov,Ulrik Grønbjerg Vej-Hansen,Maeng-Eun Lee,Samuel T. Chill,Filip Rasmussen,G. Penazzi,Fabiano Corsetti,Ari Ojanperä,Kristian Jensen,Mattias Lau Nøhr Palsgaard,Mattias Lau Nøhr Palsgaard,Umberto Martinez,Anders Blom,Mads Brandbyge,Kurt Stokbro +23 more
TL;DR: QuantumATK as discussed by the authors is an integrated set of atomic-scale modelling tools developed since 2003 by professional software engineers in collaboration with academic researchers, which enable electronic-structure calculations using density functional theory or tight-binding model Hamiltonians, and also offers bonded or reactive empirical force fields in many different parametrizations.
Journal ArticleDOI
Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors
TL;DR: In this paper, a detailed theoretical model for the physics of strain effects in bulk semiconductors and surface Si, Ge, and III-V channel metal-oxide-semiconductor field effect transistors is presented.
Journal ArticleDOI
Atomistic simulation of nanowires in the sp3d5s* tight-binding formalism: From boundary conditions to strain calculations
TL;DR: In this article, the transmission coefficients and the density of states of biased and unbiased Si and GaAs nanowires are simulated using the $s{p}^{3d}^{5}{s}^{*}$ empirical tight-binding method.
Journal ArticleDOI
Efficiency Drop in Green InGaN/GaN Light Emitting Diodes: The Role of Random Alloy Fluctuations.
TL;DR: It is shown by atomistic simulations that a consistent part of the green gap in c-plane InGaN/GaN-based light emitting diodes may be attributed to a decrease in the radiative recombination coefficient with increasing indium content due to random fluctuations of the indium concentration naturally present in any In GaN alloy.