R
Renato Minamisawa
Researcher at Paul Scherrer Institute
Publications - 39
Citations - 920
Renato Minamisawa is an academic researcher from Paul Scherrer Institute. The author has contributed to research in topics: Gate oxide & Layer (electronics). The author has an hindex of 11, co-authored 37 publications receiving 803 citations.
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Journal ArticleDOI
Analysis of enhanced light emission from highly strained germanium microbridges
Martin J. Süess,Martin J. Süess,R. Geiger,Renato Minamisawa,G. Schiefler,G. Schiefler,Jacopo Frigerio,Daniel Chrastina,Giovanni Isella,Ralph Spolenak,Jérôme Faist,Hans Sigg +11 more
TL;DR: In this paper, high-strained germanium on silicon samples with up to 3.1% uniaxial strain is fabricated and then investigated by Raman spectroscopy.
Journal ArticleDOI
Top-down fabricated silicon nanowires under tensile elastic strain up to 4.5%
Renato Minamisawa,Martin J. Süess,Ralph Spolenak,Jérôme Faist,Christian David,Jens Gobrecht,Konstantin Bourdelle,Hans Sigg +7 more
TL;DR: This work achieves 4.5% of elastic strain in 30 nm wide Si nanowires, which considerably exceeds the limit that can be obtained using SiGe-based virtual substrates, and can be applied to any tensile prestrained layer, provided the layer can be released from the substrate.
Journal ArticleDOI
Characterization of a Silicon IGBT and Silicon Carbide MOSFET Cross-Switch Hybrid
Munaf Rahimo,Francisco Canales,Renato Minamisawa,Charalampos Papadopoulos,Umamaheswara Vemulapati,Andrei Mihaila,Slavo Kicin,Uwe Drofenik +7 more
TL;DR: In this article, a parallel arrangement of a silicon (Si) IGBT and a silicon carbide (SiC) MOSFET is experimentally demonstrated, which aims to reach optimum power device performance by providing low static and dynamic losses while improving the overall electrical and thermal properties.
Journal ArticleDOI
Power-Dependent Raman Analysis of Highly Strained Si Nanobridges
Martin J. Süess,Martin J. Süess,Renato Minamisawa,R. Geiger,Konstantin Bourdelle,Hans Sigg,Ralph Spolenak +6 more
TL;DR: A method combining micro-Raman spectroscopy with finite element analysis is presented, enabling a detailed understanding of strain-sensitive Raman data measured on Si nanobridges.
Journal ArticleDOI
Current Sharing Behavior in Si IGBT and SiC MOSFET Cross-Switch Hybrid
Renato Minamisawa,Umamaheswara Vemulapati,Andrei Mihaila,Charalampos Papadopoulos,Munaf Rahimo +4 more
TL;DR: In this paper, the current sharing mechanism between IGBT and the MOSFET in the XS hybrid has been elucidated, showing that under typical switching conditions, the IGBT dissipates 98% of the Xs hybrid turn-off losses compared with the SiC MOS FET.