R
Renuka P. Jindal
Researcher at University of Louisiana at Lafayette
Publications - 74
Citations - 1028
Renuka P. Jindal is an academic researcher from University of Louisiana at Lafayette. The author has contributed to research in topics: Flicker noise & Noise (electronics). The author has an hindex of 17, co-authored 74 publications receiving 1011 citations. Previous affiliations of Renuka P. Jindal include University of Minnesota & AT&T.
Papers
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Compact Noise Models for MOSFETs
TL;DR: A physical understanding of both intrinsic and extrinsic noise mechanisms in a MOSFET is developed in this article, where a survey of current public domain MOS models is presented, and a lack of comprehensive coverage of noise models is noted.
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Gigahertz-band high-gain low-noise AGC amplifiers in fine-line NMOS
TL;DR: The design and test results of a single-chip NMOS automatic gain control (AGC) amplifier, capable of operating at 3 GHz with unity gain delivering -8 dBm into a 50-/spl Omega/ load, is described.
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Noise associated with distributed resistance of MOSFET gate structures in integrated circuits
TL;DR: In this article, the effect of thermal voltage fluctuations in a resistive gate matrix perpendicular to the direction of channel current, in a MOSFET, is treated in detail, and a general formula is derived to arrive at channel current fluctuations for an arbitrary gate matrix layout.
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Hot-electron effects on channel thermal noise in fine-line NMOS field-effect transistors
TL;DR: In this paper, a strong correlation between high electric field and excess noise strongly suggests hot electrons as being responsible for this excess channel thermal noise, which increases with an increase in drain-to-source voltage and a decrease in channel length.
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Phonon fluctuation model for flicker noise in elemental semiconductors
Renuka P. Jindal,A. van der Ziel +1 more
TL;DR: In this article, the relaxation time of phonons is directly proportional to the fourth power of the phonon wavelength, which is the wavelength of phonon lattice scattering in germanium and silicon.