Journal ArticleDOI
Noise associated with distributed resistance of MOSFET gate structures in integrated circuits
TLDR
In this article, the effect of thermal voltage fluctuations in a resistive gate matrix perpendicular to the direction of channel current, in a MOSFET, is treated in detail, and a general formula is derived to arrive at channel current fluctuations for an arbitrary gate matrix layout.Abstract:
The effect of thermal voltage fluctuations in a resistive gate matrix perpendicular to the direction of channel current, in a MOSFET, are treated in detail. A general formula is derived to arrive at channel current fluctuations for an arbitrary gate matrix layout. This formulation is an extension of the analysis done by Thornber and is valid for frequencies at which the distributed RC time constants associated with the gate matrix are not important. The results of this analysis can be used to design low-noise resistive gate structures.read more
Citations
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Journal ArticleDOI
A 1.5-V, 1.5-GHz CMOS low noise amplifier
D.K. Shaeffer,Thomas H. Lee +1 more
TL;DR: In this article, a 1.5 GHz low noise amplifier (LNA) intended for use in a global positioning system (GPS) receiver, has been implemented in a standard 0.6/spl mu/m CMOS process.
Proceedings ArticleDOI
A 1.5 V, 1.5 GHz CMOS low noise amplifier
D.K. Shaeffer,Thomas H. Lee +1 more
TL;DR: In this paper, a 1.5 GHz low noise amplifier for a Global Positioning System (GPS) receiver has been implemented in a 0.6 /spl mu/m CMOS process.
Journal ArticleDOI
Noise modeling for RF CMOS circuit simulation
A.J. Scholten,L.F. Tiemeijer,R. van Langevelde,R.J. Havens,A.T.A. Zegers-van Duijnhoven,V. C. Venezia +5 more
TL;DR: In this paper, a nonquasi-static channel segmentation model was proposed to predict both drain and gate current noise in 0.18-/spl mu/m CMOS technology.
Journal ArticleDOI
Microwave CMOS-device physics and design
TL;DR: A qualitative understanding of the microwave characteristics of MOS transistors is provided in this article, which is directed toward helping analog IC circuit designers create better front-end radio-frequency CMOS circuits.
Patent
Fully implantable nerve signal sensing and stimulation device and method for treating foot drop and other neurological disorders
TL;DR: A fully implantable nerve stimulation system includes an event-triggered, closed-loop control unit that detects physiological events from nerve signals and delivers stimulation pulses to a nerve to produce a desired physiological response as discussed by the authors.
References
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Journal ArticleDOI
Thermal Agitation of Electric Charge in Conductors
TL;DR: In this article, the electromotive force due to thermal agitation in conductors is calculated by means of principles in thermodynamics and statistical mechanics, and the results obtained agree with results obtained experimentally.
Journal ArticleDOI
Theory of noise in metal oxide semiconductor devices
A.G. Jordan,N.A. Jordan +1 more
TL;DR: In this paper, the authors show that at low frequencies this modulation is the dominant effect, giving rise to a noise power spectrum which resembles 1/f noise at high frequencies, where only thermal noise in the channel and input noise are of importance, and MOS triodes are similar to junction field effect devices from the noise point of view.
Journal ArticleDOI
The effects of fixed bulk charge on the thermal noise in metal-oxide-semiconductor transistors
TL;DR: In this paper, the theory of thermal noise due to channel conductance fluctuation is extended for insulated gate (MOS) field effect transistors with the gate voltage induced channel structure by including the bulk charge from the ionized impurities in the semiconductor substrate.
Journal ArticleDOI
Resistive-gate-induced thermal noise in IGFETs
TL;DR: The contribution to the noise in the drain current of an IGFET caused by thermal fluctuations in a resistive gate is calculated and it is found that such induced noise becomes important when the gate conductance becomes comparable to the device transconductance.