There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Physical mechanisms responsible for nondestructive single-event effects in digital microelectronics are reviewed, concentrating on silicon MOS devices and integrated circuits. A brief historical overview of single-event effects in space and terrestrial systems is given, and upset mechanisms in dynamic random access memories, static random access memories, and combinational logic are detailed. Techniques for mitigating single-event upset are described, as well as methods for predicting device and circuit single-event response using computer simulations. The impact of technology trends on single-event susceptibility and future areas of concern are explored.

Basic mechanisms and modeling of single-event upset in digital microelectronics

The guide serves as a primer for decision and policy makers, technical specialists, central, regional and local government officials, and concerned stakeholders in the community sector, civil society and non-governmental organizations, and the private sector. The Guide embodies the state-of-the art on integrated urban flood risk management. The Guide starts with a summary for policy makers which outlines and describes the key areas which policy makers need to be knowledgeable about to create policy directions and an integrated strategic approach for urban flood risk management. The core of the Guide consists of seven chapters, organized as: understanding flood hazard; understanding flood impacts; integrated flood risk management (structural measures and non-structural measures); evaluating alternative flood risk management options: tools for decision makers; implementing integrated flood risk management; and conclusion. Each chapter starts with a full contents list and a summary of the chapter for quick reference.

Cities and Flooding: A Guide to Integrated Urban Flood Risk Management for the 21st Century

This paper provides a historical review of the literature on the effects of radiation-induced displacement damage in semiconductor materials and devices. Emphasis is placed on effects in technologically important bulk silicon and silicon devices. The primary goals are to provide a guide to displacement damage literature, to offer critical comments regarding that literature in an attempt to identify key findings, to describe how the understanding of displacement damage mechanisms and effects has evolved, and to note current trends. Selected tutorial elements are included as an aid to presenting the review information more clearly and to provide a frame of reference for the terminology used. The primary approach employed is to present information qualitatively while leaving quantitative details to the cited references. A bibliography of key displacement-damage information sources is also provided.

Review of displacement damage effects in silicon devices

The single-event response of a three-layer heterogeneously integrated commercial off-the-shelf (COTS) CMOS image sensor (CIS) to alpha particles of different energies is analyzed. The energies of the alpha particles are selected, such that they stop in two separate functional layers of the device-under-test (DUT). Differences in the single-event response of the DUT depend on alpha particle energy. Spatial profiling of ionizing events reveals susceptibility in the peripheral circuitry of the dynamic random-access memory (DRAM) layer to single-event functional interrupts (SEFIs). The on-chip demosaicing algorithm contributes significantly to the number of pixels affected by transient-ionizing events. Large groupings of affected pixels are manifestations of ionizing events in the peripheral circuitry contained within the image-sensitive layer of the DUT. Similarities in the captured data sets reveal the single-event response of the pixel layer dominates the system-level response of the DUT.

Robert A. Reed

Papers

Probing the Single-Event Sensitivity of a COTS 3D-Integrated Imager With Alpha Particle Irradiation