There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Physical mechanisms responsible for nondestructive single-event effects in digital microelectronics are reviewed, concentrating on silicon MOS devices and integrated circuits. A brief historical overview of single-event effects in space and terrestrial systems is given, and upset mechanisms in dynamic random access memories, static random access memories, and combinational logic are detailed. Techniques for mitigating single-event upset are described, as well as methods for predicting device and circuit single-event response using computer simulations. The impact of technology trends on single-event susceptibility and future areas of concern are explored.

Basic mechanisms and modeling of single-event upset in digital microelectronics

The guide serves as a primer for decision and policy makers, technical specialists, central, regional and local government officials, and concerned stakeholders in the community sector, civil society and non-governmental organizations, and the private sector. The Guide embodies the state-of-the art on integrated urban flood risk management. The Guide starts with a summary for policy makers which outlines and describes the key areas which policy makers need to be knowledgeable about to create policy directions and an integrated strategic approach for urban flood risk management. The core of the Guide consists of seven chapters, organized as: understanding flood hazard; understanding flood impacts; integrated flood risk management (structural measures and non-structural measures); evaluating alternative flood risk management options: tools for decision makers; implementing integrated flood risk management; and conclusion. Each chapter starts with a full contents list and a summary of the chapter for quick reference.

Cities and Flooding: A Guide to Integrated Urban Flood Risk Management for the 21st Century

This paper provides a historical review of the literature on the effects of radiation-induced displacement damage in semiconductor materials and devices. Emphasis is placed on effects in technologically important bulk silicon and silicon devices. The primary goals are to provide a guide to displacement damage literature, to offer critical comments regarding that literature in an attempt to identify key findings, to describe how the understanding of displacement damage mechanisms and effects has evolved, and to note current trends. Selected tutorial elements are included as an aid to presenting the review information more clearly and to provide a frame of reference for the terminology used. The primary approach employed is to present information qualitatively while leaving quantitative details to the cited references. A bibliography of key displacement-damage information sources is also provided.

Review of displacement damage effects in silicon devices

Negative-bias-stress and total-ionizing-dose (TID) effects in deeply scaled Ge-gate-all-around (GAA) nanowire (NW) devices are characterized for different biasing conditions. Negative-bias-stress-induced degradation in Ge GAA device originates primarily from the interface- and border-trap generation. Devices stressed at high gate voltage show rapid initial degradation and quick saturation dominated by interface-trap generation. Radiation-induced OFF-state leakage current in Ge GAA NWs increases with dose due to enhanced band-to-band tunneling (BTBT) caused by charge trapping in the shallow trench isolation (STI).

Negative-Bias-Stress and Total-Ionizing-Dose Effects in Deeply Scaled Ge-GAA Nanowire pFETs

This paper describes the single event performance of a dual-complementary D-type Flip-Flop (DC-DFF) implemented similarly to Dual Interlocked Cell (DICE-DFFs), but without pass-gates. Circuit-level modeling indicates that the DC-DFF is resistant to single event transient (SET) capture of errant signals on the data lines while increasing the operating speed, as compared to the DICE-DFF. However, the simulations also predict that the DC-DFF is susceptible to internal single events during data transitions. This susceptibility is not present in basic DICE designs, but is present in standard DFF designs. Heavy ion testing verified the simulations of the internal single-event clock-dependent mechanism in the DC-DFF design. This dynamic clock-dependent mechanism is described in detail.

Impact of ion-induced transients on high-speed dual-complementary Flip-Flop designs

Total-ionizing-dose effects on electrothermal micro- scanners are investigated using 10-keV X-rays and 14.3-MeV oxygen ions. The corresponding changes in mechanical displacement are measured using an optical microscope. Applied dc voltage and/or radiation-induced charging lead to changes in the vertical position and resistance of the structures. Radiation-induced changes in the vertical position and resistance and postirradiation recovery or superrecovery of these quantities are sensitive to dc biases applied during and/or after irradiation. Simple electrostatic and computational models are qualitatively consistent with observed trends in device response.

Total-Ionizing-Dose Effects on Al/SiO 2 Bimorph Electrothermal Microscanners

SiGe HBT heavy ion current transients are measured using microbeam and both high- and low-energy broadbeam sources. These new data provide detailed insight into the effects of ion range, LET, and strike location.

https://ntrs.nasa.gov/api/citations/20090026596/downloads/20090026596.pdf

Robert A. Reed

Papers

Negative-Bias-Stress and Total-Ionizing-Dose Effects in Deeply Scaled Ge-GAA Nanowire pFETs

Impact of ion-induced transients on high-speed dual-complementary Flip-Flop designs

Total-Ionizing-Dose Effects on Al/SiO 2 Bimorph Electrothermal Microscanners

Heavy Ion Microbeam and Broadbeam Transients in SiGe HBTs

Total-dose response of HfO2/Hf-based bipolar resistive memories