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Robert A. Reed
Researcher at Vanderbilt University
Publications - 406
Citations - 9511
Robert A. Reed is an academic researcher from Vanderbilt University. The author has contributed to research in topics: Single event upset & Monte Carlo method. The author has an hindex of 48, co-authored 392 publications receiving 8571 citations. Previous affiliations of Robert A. Reed include United States Naval Research Laboratory & Goddard Space Flight Center.
Papers
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Journal ArticleDOI
Contribution of Control Logic Upsets and Multi-Node Charge Collection to Flip-Flop SEU Cross-Section in 40-nm CMOS
Balaji Narasimham,J. K. Wang,M. Buer,R Gorti,Karthik Chandrasekharan,Kevin M. Warren,Brian D. Sierawski,Ronald D. Schrimpf,Robert A. Reed,Robert A. Weller +9 more
TL;DR: In this paper, a Monte-Carlo model of the flip-flop was used to analyze the impact of multi-node charge collection within a flip flop due to a single particle strike.
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Understanding the Average Electron–Hole Pair-Creation Energy in Silicon and Germanium Based on Full-Band Monte Carlo Simulations
Jingtian Fang,Mahmud Reaz,Stephanie L. Weeden-Wright,Ronald D. Schrimpf,Robert A. Reed,Robert A. Weller,Massimo V. Fischetti,Sokrates T. Pantelides +7 more
TL;DR: In this article, the authors examined the thermalization process of sub-10-eV charge carriers with treating carrier transport with full-band Monte Carlo simulations and showed that only interactions that occur after the radiation-generated charge carriers decay to energies of ~10 eV or less determine the fundamental property of the radiation ionization energies.
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Heavy Ion Testing With Iron at 1 GeV/amu
Jonathan A. Pellish,Michael A. Xapsos,Kenneth A. LaBel,Paul W. Marshall,David F. Heidel,Kenneth P. Rodbell,Mark C. Hakey,Paul E. Dodd,Marty R. Shaneyfelt,James R. Schwank,Robert Baumann,Xiaowei Deng,Andrew Marshall,Brian D. Sierawski,Jeffrey D. Black,Robert A. Reed,Ronald D. Schrimpf,Hak Kim,Melanie D. Berg,Michael J. Campola,M. Friendlich,C. Perez,Anthony M. Phan,Christina Seidleck +23 more
TL;DR: In this article, a 1 GeV/amu 56Fe ion beam allows for true 90° tilt irradiations of various microelectronic components and reveals relevant upset trends at the GCR flux energy peak.
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Accelerated oxidation of silicon due to x-ray irradiation
S. Bhandaru,En Xia Zhang,Daniel M. Fleetwood,Robert A. Reed,Robert A. Weller,Robert R. Harl,Bridget R. Rogers,Sharon M. Weiss +7 more
TL;DR: In this article, a 10-keV X-ray irradiation was found to increase oxide growth rate with increasing dose rate, which is attributed to the generation of ozone, which decomposes into molecular oxygen and highly reactive atomic oxygen at the surface of the Si wafer.
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An investigation of proton energy effects in SiGe HBT technology
Shiming Zhang,John D. Cressler,S. Subbanna,Robert A. Groves,Guofu Niu,Tamara Isaacs-Smith,John R. Williams,H. Bakhru,Paul W. Marshall,Hyun-Chul Kim,Robert A. Reed +10 more
TL;DR: In this article, the first investigation of low energy (1.75 MeV) proton irradiation in SiGe HBT's and discuss proton energy effects was presented.