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Robert A. Reed

Researcher at Vanderbilt University

Publications -  406
Citations -  9511

Robert A. Reed is an academic researcher from Vanderbilt University. The author has contributed to research in topics: Single event upset & Monte Carlo method. The author has an hindex of 48, co-authored 392 publications receiving 8571 citations. Previous affiliations of Robert A. Reed include United States Naval Research Laboratory & Goddard Space Flight Center.

Papers
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Proceedings ArticleDOI

Soft error reliability improvements for implantable medical devices

TL;DR: Experimental and modeling results of logic upsets in a 0.25 mum CMOS IC process are discussed, showing the vulnerability of these processes to soft error events.
Journal ArticleDOI

Application of a novel test system to characterize single-event effects at cryogenic temperatures

TL;DR: In this article, a customized cryogenic test system for use in in situ single-event radiation tests on semiconductor devices at cryogenic temperatures is presented, which is designed for use with either liquid nitrogen or liquid helium as cryogens, depending on the desired lower temperature limit.
Journal ArticleDOI

Two-Dimensional Markov Chain Analysis of Radiation-Induced Soft Errors in Subthreshold Nanoscale CMOS Devices

TL;DR: In this article, an analytical framework based on Markov chains and queue theory is presented for computation of alpha-particle-induced soft-error rates of a flip-flop operated in the subthreshold regime.
Journal ArticleDOI

Evaluation and Application of U.S. Medical Proton Facilities for Single Event Effects Test

TL;DR: In this article, the challenges of using new medical proton therapy cyclotrons for SEE tests in the 200 MeV regime are presented. Butler et al. present a common dosimetry system for independent determination of fluence and beam uniformity.
Proceedings ArticleDOI

Impact of process variability on the radiation-induced soft error of nanometer-scale srams in hold and read conditions

TL;DR: In this paper, a complex dependence on the arrival time of the particle strike relative to the word-line clock is observed, which affects the soft-error sensitivity of SRAM cells, and the effect of process variation on the soft error sensitivity is discussed.