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Robert A. Reed
Researcher at Vanderbilt University
Publications - 406
Citations - 9511
Robert A. Reed is an academic researcher from Vanderbilt University. The author has contributed to research in topics: Single event upset & Monte Carlo method. The author has an hindex of 48, co-authored 392 publications receiving 8571 citations. Previous affiliations of Robert A. Reed include United States Naval Research Laboratory & Goddard Space Flight Center.
Papers
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Journal ArticleDOI
The effects of operating bias conditions on the proton tolerance of SiGe HBTs
Shiming Zhang,John D. Cressler,Guofu Niu,Cheryl J. Marshall,Paul W. Marshall,Hak Kim,Robert A. Reed,M.J. Palmer,Alvin J. Joseph,David L. Harame +9 more
TL;DR: In this article, the effects of operating bias conditions on the proton tolerance of Silicon-Germanium (SiGe) heterojunction bipolar transistors (HBTs) are investigated for the first time.
Journal ArticleDOI
Total Ionizing Dose (TID) Effects in Extremely Scaled Ultra-Thin Channel Nanowire (NW) Gate-All-Around (GAA) InGaAs MOSFETs
Shufeng Ren,Mengwei Si,Kai Ni,Xin Wan,Jin Chen,Sung-Jae Chang,Xiao Sun,En Xia Zhang,Robert A. Reed,Daniel M. Fleetwood,Peide D. Ye,Sharon Cui,T. P. Ma +12 more
TL;DR: In this paper, low-frequency noise measurements are carried out to probe near-interfacial oxide-trap (border-trap) densities, and TCAD simulations are performed to assist in understanding the charge trapping in NW channel devices with high-k gate dielectrics.
Journal ArticleDOI
Physical mechanisms of single-event effects in advanced microelectronics
TL;DR: The single event error rate in advanced semiconductor technologies can be estimated more accurately than conventional methods by using simulation based on accurate descriptions of a large number of individual particle interactions as discussed by the authors.
Proceedings ArticleDOI
Recent radiation damage and single event effect results for microelectronics
M.V. O'Bryan,Ken LaBel,Robert A. Reed,J.W. Howard,Janet L. Barth,C.M. Seidleck,Paul W. Marshall,Cheryl J. Marshall,Hak Kim,D.K. Hawkins,M.A. Carts,K.E. Forslund +11 more
TL;DR: In this article, the authors present heavy ion and proton single event effects (SEE) as well as radiation damage ground test results for candidate spacecraft electronics including digital, analog, and hybrid devices.
Journal ArticleDOI
Prediction of early lethal SEGR failures of VDMOSFETs for commercial space systems
Jeffrey L. Titus,C.F. Wheatley,T.H. Wheatley,W.A. Levinson,D.I. Burton,Janet L. Barth,Robert A. Reed,Ken LaBel,J.W. Howard,K.M. van Tyne +9 more
TL;DR: In this paper, the authors presented a quantitative risk assessment of two radiation-hardened MOSFETs (Harris FSL11A0 and FRL11a0) using an extracted expression, integral flux curves representing different conditions, and experimentally-determined signature curves taken at different ion impact angles.