R
Robert A. Reed
Researcher at Vanderbilt University
Publications - 406
Citations - 9511
Robert A. Reed is an academic researcher from Vanderbilt University. The author has contributed to research in topics: Single event upset & Monte Carlo method. The author has an hindex of 48, co-authored 392 publications receiving 8571 citations. Previous affiliations of Robert A. Reed include United States Naval Research Laboratory & Goddard Space Flight Center.
Papers
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Journal ArticleDOI
Temperature Dependence of Digital Single-Event Transients in Bulk and Fully-Depleted SOI Technologies
Matthew J. Gadlage,J. R. Ahlbin,V. Ramachandran,P. M. Gouker,C.A. Dinkins,Bharat L. Bhuva,Balaji Narasimham,Ronald D. Schrimpf,Michael W. McCurdy,Michael L. Alles,Robert A. Reed,Marcus H. Mendenhall,Lloyd W. Massengill,R.L. Shuler,Dale McMorrow +14 more
TL;DR: In this article, SET pulse-width measurements are performed over a wide temperature range in both bulk and fully-depleted SOI (silicon on insulator) technologies, and the average pulsewidth increases with temperature for the bulk process, but not for the FDSOI process.
Journal ArticleDOI
Predicting Thermal Neutron-Induced Soft Errors in Static Memories Using TCAD and Physics-Based Monte Carlo Simulation Tools
Kevin M. Warren,Brian D. Sierawski,Robert A. Weller,Robert A. Reed,Marcus H. Mendenhall,Jonathan A. Pellish,Ronald D. Schrimpf,Lloyd W. Massengill,Mark Porter,J.D. Wilkinson +9 more
TL;DR: In this article, a combination of commercial simulation tools and custom applications utilizing Geant4 physics libraries is used to analyze thermal neutron induced soft error rates in a commercial bulk CMOS SRAM.
Journal ArticleDOI
The Effects of Neutron Energy and High-Z Materials on Single Event Upsets and Multiple Cell Upsets
M.A. Clemens,Brian D. Sierawski,Kevin M. Warren,Marcus H. Mendenhall,N. A. Dodds,Robert A. Weller,Robert A. Reed,Paul E. Dodd,Marty R. Shaneyfelt,J.R. Schwank,Stephen A. Wender,Robert Baumann +11 more
TL;DR: In this paper, the authors show that the presence of high-Z materials, like tungsten, can increase the single event upset (SEU) and multiple cell upset (MCU) cross sections of high critical charge (Qcrit) devices exposed to the terrestrial neutron environment because of interactions with high energy ( >; 100 MeV) neutrons.
Proceedings ArticleDOI
Radiation hardness of FDSOI and FinFET technologies
Michael L. Alles,Ronald D. Schrimpf,Robert A. Reed,Lloyd W. Massengill,Robert A. Weller,Marcus H. Mendenhall,Dennis R. Ball,Kevin M. Warren,T. D. Loveless,Jeffrey S. Kauppila,Brian D. Sierawski +10 more
TL;DR: In this article, the authors consider the effect of the buried insulating layer (buried oxide - BOX) on total ionizing dose (TID) radiation effects, particularly for fully depleted (FD) SOI.
Journal ArticleDOI
3-D simulation of heavy-ion induced charge collection in SiGe HBTs
M. Varadharajaperumal,Guofu Niu,R. Krithivasan,John D. Cressler,Robert A. Reed,Paul W. Marshall,G. Vizkelethy,Paul E. Dodd,Alvin J. Joseph +8 more
TL;DR: In this paper, the authors presented the first 3D simulation of heavy ion induced charge collection in a SiGe HBT, together with microbeam testing data, and good agreement was achieved between the experimental and simulated data.