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Robert A. Reed
Researcher at Vanderbilt University
Publications - 406
Citations - 9511
Robert A. Reed is an academic researcher from Vanderbilt University. The author has contributed to research in topics: Single event upset & Monte Carlo method. The author has an hindex of 48, co-authored 392 publications receiving 8571 citations. Previous affiliations of Robert A. Reed include United States Naval Research Laboratory & Goddard Space Flight Center.
Papers
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Journal ArticleDOI
Radiation Effects in Advanced Multiple Gate and Silicon-on-Insulator Transistors
Eddy Simoen,Marc Gaillardin,P. Paillet,Robert A. Reed,Ronald D. Schrimpf,Michael L. Alles,F. El-Mamouni,Daniel M. Fleetwood,Alessio Griffoni,Cor Claeys +9 more
TL;DR: In this article, the authors describe the current understanding of the radiation response of state-of-the-art Silicon-on-Insulator (SOI) and FinFET CMOS technologies.
Journal ArticleDOI
Single event effects in circuit-hardened SiGe HBT logic at gigabit per second data rates
Paul W. Marshall,M.A. Carts,A.B. Campbell,Dale McMorrow,S. P. Buchner,R. Stewart,B.A. Randall,Barry K. Gilbert,Robert A. Reed +8 more
TL;DR: This attempt at circuit level single event effects (SEE) hardening of SiGe HBT logic provides the first reported indication of the level of sensitivity in this important technology.
Journal ArticleDOI
Muon-Induced Single Event Upsets in Deep-Submicron Technology
Brian D. Sierawski,Marcus H. Mendenhall,Robert A. Reed,M.A. Clemens,Robert A. Weller,Ronald D. Schrimpf,Ewart W. Blackmore,Michael Trinczek,Bassam Hitti,Jonathan A. Pellish,Robert Baumann,Shi-Jie Wen,Rick Wong,Nelson Tam +13 more
TL;DR: In this paper, a surface barrier detector was used to characterize the kinetic energy spectra produced by the M20B surface muon beam at TRIUMF and a Geant4 application is used to simulate the beam and estimate the energy spectrum incident on the memories.
Journal ArticleDOI
Heavy ion and proton-induced single event multiple upset
Robert A. Reed,M.A. Carts,P.W. Marshall,C.J. Marshall,O. Musseau,P.J. McNulty,D.R. Roth,S. P. Buchner,Joseph S. Melinger,T. Corbiere +9 more
TL;DR: In this article, a single proton-induced spallation reaction that causes two adjacent memory cells to change logic states in a high density CMOS SRAM was shown to be within a factor of three of experimental data for protons.
Journal ArticleDOI
Autonomous bit error rate testing at multi-gbit/s rates implemented in a 5AM SiGe circuit for radiation effects self test (CREST)
Paul W. Marshall,M.A. Carts,S. Currie,Robert A. Reed,B.A. Randall,K. Fritz,K. Kennedy,Melanie D. Berg,R. Krithivasan,C. Siedleck,Raymond L. Ladbury,Cheryl J. Marshall,John D. Cressler,Guofu Niu,Ken LaBel,Barry K. Gilbert +15 more
TL;DR: A generally applicable self test circuit approach implemented in IBM's 5AM SiGe process is demonstrated, and its ability to capture complex error signatures during circuit operation at data rates exceeding 5 Gbit/s is described.