Journal ArticleDOI
Schottky barrier height of Au on the transparent semiconducting oxide β-Ga2O3
Mansour Mohamed,Klaus Irmscher,Christoph Janowitz,Zbigniew Galazka,Recardo Manzke,Roberto Fornari +5 more
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TLDR
In this paper, the Schottky barrier height of n-type β-Ga2O3 single crystals was determined by currentvoltage characteristics and high-resolution photoemission spectroscopy.Abstract:
The Schottky barrier height of Au deposited on (100) surfaces of n-type β-Ga2O3 single crystals was determined by current-voltage characteristics and high-resolution photoemission spectroscopy resulting in a common effective value of 1.04 ± 0.08 eV. Furthermore, the electron affinity of β-Ga2O3 and the work function of Au were determined to be 4.00 ± 0.05 eV and 5.23 ± 0.05 eV, respectively, yielding a barrier height of 1.23 eV according to the Schottky-Mott rule. The reduction of the Schottky-Mott barrier to the effective value was ascribed to the image-force effect and the action of metal-induced gap states, whereas extrinsic influences could be avoided.read more
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A review of Ga2O3 materials, processing, and devices
Stephen J. Pearton,Jiancheng Yang,Patrick H. Cary,Fan Ren,Jihyun Kim,Marko J. Tadjer,Michael A. Mastro +6 more
TL;DR: The role of defects and impurities on the transport and optical properties of bulk, epitaxial, and nanostructures material, the difficulty in p-type doping, and the development of processing techniques like etching, contact formation, dielectrics for gate formation, and passivation are discussed in this article.
Journal ArticleDOI
On the bulk β-Ga2O3 single crystals grown by the Czochralski method
Zbigniew Galazka,Klaus Irmscher,Reinhard Uecker,Rainer Bertram,Mike Pietsch,Albert Kwasniewski,M. Naumann,Tobias Schulz,Robert Schewski,Detlef Klimm,Matthias Bickermann +10 more
TL;DR: In this article, the Czochralski method was used to grow 2 in. diameter β-Ga 2 O 3 single crystals with high free-carrier absorption in the near infrared (NIR) wavelength range.
Journal ArticleDOI
Guest Editorial: The dawn of gallium oxide microelectronics
Journal ArticleDOI
Review of gallium-oxide-based solar-blind ultraviolet photodetectors
TL;DR: A comprehensive review of solar-blind photodetectors based on gallium oxide (Ga2O3) materials in various forms of bulk single crystal, epitaxial films, nanostructures, and their ternary alloys is presented in this paper.
References
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Journal ArticleDOI
Optical Absorption and Photoconductivity in the Band Edge of β − Ga 2 O 3
TL;DR: In this article, a model was proposed in which the absorption arises as a result of excitation of an electron from the oxygen $2p$ band to the gallium $4s$ band.
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Oxygen vacancies and donor impurities in β-Ga2O3
TL;DR: In this paper, the role of oxygen vacancies and various impurities in the electrical and optical properties of the transparent conducting oxide β-Ga2O3 was investigated using hybrid functionals.
Journal ArticleDOI
ZnO Schottky barriers and Ohmic contacts
Leonard J. Brillson,Yicheng Lu +1 more
TL;DR: A comprehensive review of Schottky barrier and ohmic contacts including work extending over the past half century is provided in this paper, where the results span the nature of ZnO surface charge transfer, the roles of surface cleaning, crystal quality, chemical interactions, and defect formation.
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Electrical properties of β-Ga2O3 single crystals grown by the Czochralski method
TL;DR: In this paper, temperature dependent conductivity and Hall effect measurements were performed on β-Ga2O3 crystals grown by the Czochralski method from an iridium crucible under a carbon dioxide containing atmosphere.
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Role of self-trapping in luminescence and p -type conductivity of wide-band-gap oxides
TL;DR: In this paper, the authors investigated the behavior of holes in the valence band of a range of wide-band-gap oxides including ZnO, MgO, In, Naor, Ga, Al, SnO, SiO, and TiO.