Journal ArticleDOI
Surface passivation of high‐efficiency silicon solar cells by atomic‐layer‐deposited Al2O3
Reads0
Chats0
TLDR
In this paper, an atomic layer-deposited aluminium oxide (Al2O3) is applied as rear surface-passivating dielectric layer to passivated emitter and rear cell (PERC)-type crystalline silicon (c-Si) solar cells.Abstract:
Atomic-layer-deposited aluminium oxide (Al2O3) is applied as rear-surface-passivating dielectric layer to passivated emitter and rear cell (PERC)-type crystalline silicon (c-Si) solar cells. The excellent passivation of low-resistivity p-type silicon by the negative-charge-dielectric Al2O3 is confirmed on the device level by an independently confirmed energy conversion efficiency of 20·6%. The best results are obtained for a stack consisting of a 30 nm Al2O3 film covered by a 200 nm plasma-enhanced-chemical-vapour-deposited silicon oxide (SiOx) layer, resulting in a rear surface recombination velocity (SRV) of 70 cm/s. Comparable results are obtained for a 130 nm single-layer of Al2O3, resulting in a rear SRV of 90 cm/s. Copyright © 2008 John Wiley & Sons, Ltd.read more
Citations
More filters
Journal ArticleDOI
Sensitive X-ray detectors made of methylammonium lead tribromide perovskite single crystals
Haotong Wei,Yanjun Fang,Yanjun Fang,Padhraic Mulligan,William Chuirazzi,Hong-Hua Fang,Congcong Wang,Benjamin Ecker,Yongli Gao,Yongli Gao,Maria Antonietta Loi,Lei Cao,Jinsong Huang +12 more
TL;DR: In this paper, single-crystal perovskite devices 2-3 mm thick exhibit 16.4% X-ray detection efficiency with sensitivity four times higher than α-Se detectors.
Journal ArticleDOI
Highly narrowband perovskite single-crystal photodetectors enabled by surface-charge recombination
TL;DR: In this paper, a hybrid perovskite single-crystal photodetector with a very narrow spectral response with a full width at half-maximum of <20 nm was presented.
Journal ArticleDOI
Thin-film Sb2Se3 photovoltaics with oriented one-dimensional ribbons and benign grain boundaries
Ying Zhou,Liang Wang,Shiyou Chen,Sikai Qin,Xinsheng Liu,Jie Chen,Ding-Jiang Xue,Miao Luo,Yuanzhi Cao,Yi-Bing Cheng,Edward H. Sargent,Jiang Tang +11 more
TL;DR: In this article, a simple, non-toxic and low-cost antimony selenide (Sb2Se3) material with an optimal solar bandgap of ∼1.1
Journal ArticleDOI
Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
TL;DR: In this paper, aluminum oxide (Al2O3) nanolayers synthesized by atomic layer deposition (ALD) have been used for the passivation of p-and n-type crystalline Si (c-Si) surfaces.
Journal ArticleDOI
On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3
TL;DR: In this article, the authors demonstrate that the surface passivation of Al2O3 can be related to a satisfactory low interface defect density in combination with a strong field-effect passivation induced by a negative fixed charge density.
References
More filters
Journal ArticleDOI
Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
TL;DR: The state-of-the-art surface passivation of c-Si solar cells is achieved by Al2O3 films prepared by plasma-assisted atomic layer deposition, yielding effective surface recombination velocities of 2 and 13cm∕s on low resistivity n- and p-type cSi, respectively as mentioned in this paper.
Journal ArticleDOI
24·5% Efficiency silicon PERT cells on MCZ substrates and 24·7% efficiency PERL cells on FZ substrates
TL;DR: In this paper, the authors reported the recent improvements in the energy conversion efficiency of solar cells on magnetically-confined Czochralski grown (MCZ) and float zone (FZ) silicon substrates at the University of New South Wales.
Journal ArticleDOI
Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge
G. Agostinelli,Annelies Delabie,Petko Vitanov,Z. Alexieva,Harold Dekkers,S. De Wolf,Guy Beaucarne +6 more
TL;DR: In this paper, surface recombination velocities as low as 10 cm/s have been obtained by treated atomic layer deposition (ALD) of Al 2 O 3 layers on p-type CZ silicon wafers.
Journal ArticleDOI
Low‐Temperature Surface Passivation of Silicon for Solar Cells
TL;DR: In this article, low-temperature-deposited silicon nitride and aluminum oxide films are investigated for reducing carrier recombination at the silicon surface, and a simple configuration for efficient back surface passivation of solar cells is introduced as a possible substitute for the conventional back surface field.
Journal ArticleDOI
Record low surface recombination velocities on 1 Ω cm p‐silicon using remote plasma silicon nitride passivation
TL;DR: In this paper, the surface passivation of low resistivity singlecrystalline p-silicon wafers is reported using silicon nitride fabricated at low temperature (375 °C) in a remote plasmaenhanced chemical vapor deposition system.