Journal ArticleDOI
19%‐efficient and 43 µm‐thick crystalline Si solar cell from layer transfer using porous silicon
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TLDR
In this article, the authors presented a both-sides-contacted thin-film crystalline silicon (c-Si) solar cell with a confirmed AM1.5 efficiency of 19.1% using the porous silicon layer transfer process.Abstract:
We present a both-sides-contacted thin-film crystalline silicon (c-Si) solar cell with a confirmed AM1.5 efficiency of 19.1% using the porous silicon layer transfer process. The aperture area of the cell is 3.98 cm2. This is the highest efficiency ever reported for transferred Si cells. The efficiency improvement over the prior state of the art (16.9%) is achieved by implementing recent developments for Si wafer cells such as surface passivation with aluminum oxide and laser ablation for contacting. The cell has a short-circuit current density of 37.8 mA cm−2, an open-circuit voltage of 650 mV, and a fill factor of 77.6%. Copyright © 2011 John Wiley & Sons, Ltd.read more
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Solar Cell Efficiency Tables (Version 39)
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High-efficiency crystalline silicon solar cells: status and perspectives
TL;DR: In this article, the authors review the dynamic field of crystalline silicon photovoltaics from a device-engineering perspective and give an up-to-date summary of promising recent pathways for further efficiency improvements and cost reduction employing novel carrierselective passivating contact schemes, as well as tandem multi-junction architectures, in particular those that combine silicon absorbers with organic-inorganic perovskite materials.
Journal ArticleDOI
Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
TL;DR: In this paper, aluminum oxide (Al2O3) nanolayers synthesized by atomic layer deposition (ALD) have been used for the passivation of p-and n-type crystalline Si (c-Si) surfaces.
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Solar Cell Efficiency Tables (Version 40)
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Pathways for solar photovoltaics
TL;DR: In this article, the authors examine potential limits to PV deployment at the terawatt scale, emphasizing constraints on the use of commodity and PV-critical materials, and propose material complexity as a guiding framework for classifying PV technologies.
References
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Journal ArticleDOI
Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
TL;DR: The state-of-the-art surface passivation of c-Si solar cells is achieved by Al2O3 films prepared by plasma-assisted atomic layer deposition, yielding effective surface recombination velocities of 2 and 13cm∕s on low resistivity n- and p-type cSi, respectively as mentioned in this paper.
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22.8% efficient silicon solar cell
TL;DR: In this paper, a new silicon solar cell structure, the passivated emitter and rear cell, is described, which yields independently confirmed efficiencies of up to 22.8%, the highest ever reported for a silicon cell.
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Surface passivation of high‐efficiency silicon solar cells by atomic‐layer‐deposited Al2O3
TL;DR: In this paper, an atomic layer-deposited aluminium oxide (Al2O3) is applied as rear surface-passivating dielectric layer to passivated emitter and rear cell (PERC)-type crystalline silicon (c-Si) solar cells.
Journal ArticleDOI
Low‐Temperature Surface Passivation of Silicon for Solar Cells
TL;DR: In this article, low-temperature-deposited silicon nitride and aluminum oxide films are investigated for reducing carrier recombination at the silicon surface, and a simple configuration for efficient back surface passivation of solar cells is introduced as a possible substitute for the conventional back surface field.