Michael Seibt

TL;DR: In this paper, the atomic process, kinetics, and equilibrium thermodynamics underlying the gettering of transition-metal impurities in Si are reviewed and methods for mathematical modeling of gettering are discussed and illustrated.

TL;DR: The magneto-Seebeck effect as mentioned in this paper is observed when a magnetic configuration changes the charge-based Seebeck coefficient, which can be measured as a voltage change directly without conversion of a spin current.

TL;DR: In this article, the dominant passivation mechanisms at the c-Si/Al2O3 interface, as well as the chemical composition of the interface region, are investigated using aluminum oxide films deposited by atomic layer deposition (ALD).

TL;DR: It is found that photoluminescent carbon nanodots behave as electric dipoles, both in absorption and emission, and that their emission originates from the recombination of photogenerated charges on defect centers involving a strong coupling between the electronic transition and collective vibrations of the lattice structure.

TL;DR: In this article, the authors demonstrate electroluminescence (EL) with an external efficiency of more than 0.1% at room temperature from glide dislocations in silicon, where the key to this achievement is a considerable reduction of nonradiative carrier recombination due to impurities and core defects by impurity gettering and hydrogen passivation, respectively.