R
Ryan Gilbert
Researcher at Wright-Patterson Air Force Base
Publications - 12
Citations - 390
Ryan Gilbert is an academic researcher from Wright-Patterson Air Force Base. The author has contributed to research in topics: High-electron-mobility transistor & Diamond. The author has an hindex of 6, co-authored 7 publications receiving 251 citations. Previous affiliations of Ryan Gilbert include Air Force Research Laboratory.
Papers
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Journal ArticleDOI
$\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation
Andrew J. Green,Kelson D. Chabak,M. Baldini,Neil Moser,Ryan Gilbert,Robert C. Fitch,Günter Wagner,Zbigniew Galazka,Jonathan Mccandless,Antonio Crespo,Kevin D. Leedy,Gregg H. Jessen +11 more
TL;DR: Preliminary results indicate potential for monolithic or heterogeneous integration of power switch and RF devices using inline-formula LaTeX, as well as power gain, efficiency, and power-added efficiency of 0.23 W/mm, 5.1 dB, and 6.3%.
Journal ArticleDOI
Implementation of High-Power-Density $X$ -Band AlGaN/GaN High Electron Mobility Transistors in a Millimeter-Wave Monolithic Microwave Integrated Circuit Process
Robert C. Fitch,Dennis E. Walker,Andrew J. Green,Stephen E. Tetlak,James K. Gillespie,Ryan Gilbert,Karynn A. Sutherlin,William Gouty,James P. Theimer,Glen D. Via,Kelson D. Chabak,Gregg H. Jessen +11 more
TL;DR: In this paper, a 0.14-16 GHz gate length GaN MMIC process capable of high-efficiency Ka-band operation while simultaneously achieving high power density in the same process flow is proposed.
Journal ArticleDOI
RF Power Performance of Sc(Al,Ga)N/GaN HEMTs at Ka-Band
Andrew J. Green,Neil Moser,Nicholas C. Miller,Kyle J. Liddy,Miles Lindquist,Michael Elliot,James K. Gillespie,Robert C. Fitch,Ryan Gilbert,Dennis E. Walker,Elizabeth Werner,Antonio Crespo,Edward Beam,Andy Xie,C. Lee,Yu Cao,Kelson D. Chabak +16 more
TL;DR: In this paper, the authors report the RF power results of Sc(Al,Ga)N/GaN high electron mobility transistors (HEMTs) with two barrier alloys.
Proceedings ArticleDOI
Sub-Micron Gallium Oxide Radio Frequency Field-Effect Transistors
Kelson D. Chabak,Dennis E. Walker,Andrew J. Green,Antonio Crespo,Miles Lindquist,Kevin D. Leedy,Steve Tetlak,Ryan Gilbert,Neil Moser,Gregg H. Jessen +9 more
TL;DR: Beta-gallium oxide (BGO) radio frequency device performance is presented using sub-micron T-shaped gates using a thin and higher doped channel with a T-gate formed by electron beam lithography.
Proceedings ArticleDOI
Accurate Nonlinear GaN HEMT Simulations from X- to Ka-Band using a Single ASM-HEMT Model
Nicholas C. Miller,Neil Moser,Robert C. Fitch,James K. Gillespie,Kyle J. Liddy,Dennis E. Walker,Andrew J. Green,Kelson D. Chabak,Michael Elliott,Ryan Gilbert,Richard Young,Elizabeth Werner,Miles Lindquist,Patrick Roblin +13 more
TL;DR: In this article, the authors present an investigation of the ASM-HEMT model large-signal accuracy across a wide range of operating frequencies, including 10, 20 and 30 GHz.