D
Dennis E. Walker
Researcher at Wright-Patterson Air Force Base
Publications - 9
Citations - 306
Dennis E. Walker is an academic researcher from Wright-Patterson Air Force Base. The author has contributed to research in topics: Gallium nitride & High-electron-mobility transistor. The author has an hindex of 8, co-authored 9 publications receiving 235 citations.
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Journal ArticleDOI
Full-Wafer Characterization of AlGaN/GaN HEMTs on Free-Standing CVD Diamond Substrates
Kelson D. Chabak,James K. Gillespie,V. Miller,Antonio Crespo,J.A. Roussos,M. Trejo,Dennis E. Walker,Glen D. Via,Gregg H. Jessen,J. Wasserbauer,Firooz Faili,Dubravko Babic,Daniel Francis,Felix Ejeckam +13 more
TL;DR: In this paper, the first conventionally processed AlGaN/GaN high electron mobility transistors (HEMTs) on free-standing chemical-vapor-deposited (CVD) diamond substrate wafers were reported.
Journal ArticleDOI
ScAlN/GaN High-Electron-Mobility Transistors With 2.4-A/mm Current Density and 0.67-S/mm Transconductance
Andrew J. Green,James K. Gillespie,Robert C. Fitch,Dennis E. Walker,Miles Lindquist,Antonio Crespo,Dan Brooks,Edward Beam,Andy Xie,Vipan Kumar,Jose L. Jimenez,C. Lee,Yu Cao,Kelson D. Chabak,Gregg H. Jessen +14 more
TL;DR: In this article, the dc and RF performance of ScAlN/GaN high-electron-mobility transistors (HEMTs) was reported and the extrinsic small-signal gain was measured as a function of drain bias and gate length.
Journal ArticleDOI
Thermal Properties of AlGaN/GaN HFETs on Bulk GaN Substrates
N. Killat,M. Montes,James W Pomeroy,Tanja Paskova,Keith R. Evans,Jacob H. Leach,Xing Li,Ümit Özgür,Hadis Morkoç,Kelson D. Chabak,Antonio Crespo,James K. Gillespie,Robert C. Fitch,M. Kossler,Dennis E. Walker,M. Trejo,Glen D. Via,J. D. Blevins,Martin Kuball +18 more
TL;DR: In this paper, the thermal properties of AlGaN/GaN heterostructure field effect transistors grown on semi-insulating bulk GaN substrates were studied using micro-Raman thermography, microphotoluminescence spectroscopy, and thermal simulation.
Journal ArticleDOI
RF Power Performance of Sc(Al,Ga)N/GaN HEMTs at Ka-Band
Andrew J. Green,Neil Moser,Nicholas C. Miller,Kyle J. Liddy,Miles Lindquist,Michael Elliot,James K. Gillespie,Robert C. Fitch,Ryan Gilbert,Dennis E. Walker,Elizabeth Werner,Antonio Crespo,Edward Beam,Andy Xie,C. Lee,Yu Cao,Kelson D. Chabak +16 more
TL;DR: In this paper, the authors report the RF power results of Sc(Al,Ga)N/GaN high electron mobility transistors (HEMTs) with two barrier alloys.
Journal ArticleDOI
Strained AlInN/GaN HEMTs on SiC With 2.1-A/mm Output Current and 104-GHz Cutoff Frequency
Kelson D. Chabak,M. Trejo,Antonio Crespo,Dennis E. Walker,Jinwei Yang,Remis Gaska,M. Kossler,James K. Gillespie,Gregg H. Jessen,Virginia Trimble,Glen D. Via +10 more
TL;DR: In this article, a dc/RF performance of lattice-strained AlInN/GaN high-electron mobility transistors (HEMTs) on SiC substrate was reported.