R
Ryo Nagai
Researcher at Hitachi
Publications - 32
Citations - 422
Ryo Nagai is an academic researcher from Hitachi. The author has contributed to research in topics: Electrolyte & Electrode. The author has an hindex of 12, co-authored 32 publications receiving 421 citations. Previous affiliations of Ryo Nagai include Elpida Memory, Inc..
Papers
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Journal ArticleDOI
256-Mb DRAM circuit technologies for file applications
Goro Kitsukawa,Masashi Horiguchi,Yoshiki Kawajiri,Takayuki Kawahara,Takesada Akiba,Yasushi Kawase,Toshikazu Tachibana,T. Sakai,Mayu Aoki,Shoji Shukuri,Kazuhiko Sagara,Ryo Nagai,Yuzuru Ohji,Norio Hasegawa,Natsuki Yokoyama,T. Kisu,Hiroki Yamashita,Tokuo Kure,Takashi Nishida +18 more
TL;DR: In this article, a self-reverse-biasing circuit for word drivers and decoders is proposed to suppress the subthreshold current to 3% of the conventional scheme, and a subarray-replacement redundancy technique that doubles chip yield and consequently reduces manufacturing costs.
Patent
Liquid fuel cell
TL;DR: In this paper, a unit fuel cell comprising a plurality of unit fuel cells each having a positive electrode for reducing oxygen, a negative electrode for oxidizing liquid fuel, and an electrolyte layer (10) interposed between the positive electrode (8) and the negative electrode (9), and a section (3) for storing liquid fuel (4), where power can be generated stably while reducing the size by arranging the plurality of units on the substantially same plane.
Proceedings ArticleDOI
256 Mb DRAM technologies for file applications
Goro Kitsukawa,Masashi Horiguchi,Y. Kawaijiri,Takayuki Kawahara,T. Aikiba,Yasushi Kawase,Toshikazu Tachibana,T. Sakai,Mayu Aoki,Shoji Shukuri,Kazuhiko Sagara,Ryo Nagai,Norio Hasegawa,Natsuki Yokoyama,T. Kisu,Hiroki Yamashita,Tokuo Kure,Takashi Nishida +17 more
TL;DR: The authors describe 256-Mb DRAM (dynamic random access memory) technologies for file applications and a subthreshold-current limiting scheme for word drivers, which features subarray-by-subarray replacement instead of the conventional line- by-line replacement.
Patent
Optical data recording medium
Osamu Saito,Hisamitsu Kamezaki,Masashi Suenaga,Ryo Nagai,Shin-Ichiro Iuchi,Hitoshi Watanabe,Hideo Fujiwara +6 more
TL;DR: In this paper, a write-once type filled up with any fillers optical data recording medium provided with recording layers for a melting and diffusion recording system is disclosed, wherein a protective layer is formed between the recording layers or between a recording layer and another plate shaped member, the protective layer being composed of a member which is not adversely effected by a melting operation and is not warped by changes of external conditions.
Proceedings ArticleDOI
An experimental 220 MHz 1 Gb DRAM
Masashi Horiguchi,Takeshi Sakata,Tomonori Sekiguchi,Shigeki Ueda,Tanaka Haruhiko,E. Yamasaki,Y. Nakagome,Mayu Aoki,I. Kaga,Makoto Ohkura,Ryo Nagai,Fumio Murai,Toshihiro Tanaka,S. Iijima,Natsuki Yokoyama,Yasushi Gotoh,Kenichi Shoji,T. Kisu,Hiroki Yamashita,Takashi Nishida,E. Takeda +20 more
TL;DR: Two circuit technologies for a synchronously operating high-data-rate 1 Gb DRAM are presented: a distributed-column-control architecture reducing the burst-mode cycle time, and a ringing-canceling output buffer ensuring reliable high-speed data transfer.