256 Mb DRAM technologies for file applications

TLDR: The authors describe 256-Mb DRAM (dynamic random access memory) technologies for file applications and a subthreshold-current limiting scheme for word drivers, which features subarray-by-subarray replacement instead of the conventional line- by-line replacement.

Abstract: The authors describe 256-Mb DRAM (dynamic random access memory) technologies for file applications. A subthreshold-current limiting scheme for word drivers is shown. The scheme uses a pMOS switching transistor between the wordline voltage and the driver transistor common-source terminal. The subthreshold current of a 256-Mb DRAM is reduced to 3% by applying this scheme to word drivers and decoders, and the total data-retention current is less than that of a 64-Mb DRAM. A redundancy technique is shown which features subarray-by-subarray replacement instead of the conventional line-by-line replacement. To evaluate the circuit technologies described here, an experimental 256-Mb DRAM was fabricated using 0.25- mu m CMOS technology with phase-shift lithography. It uses a 0.72- mu m/sup 2/ RSTC cell with a storage capacitance of 25 fF and operates on a voltage of 1.5-3.6 V. >