S
Sai-Kong Chin
Researcher at Institute of High Performance Computing Singapore
Publications - 9
Citations - 160
Sai-Kong Chin is an academic researcher from Institute of High Performance Computing Singapore. The author has contributed to research in topics: Heterojunction & Field-effect transistor. The author has an hindex of 7, co-authored 9 publications receiving 155 citations. Previous affiliations of Sai-Kong Chin include National University of Singapore & Agency for Science, Technology and Research.
Papers
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Journal ArticleDOI
A Simulation Study of Graphene-Nanoribbon Tunneling FET With Heterojunction Channel
Kai-Tak Lam,Dawei Seah,Sai-Kong Chin,S. Bala Kumar,Ganesh S. Samudra,Yee-Chia Yeo,Gengchiau Liang +6 more
TL;DR: In this paper, the authors investigated the effect of channel length scaling on an HJ GNR TFET, and observed that an ION/IOFF ratio of four orders of magnitude can be achieved with a channel length of 10 nm and a drain bias of 0.6 V.
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Device Physics and Characteristics of Graphene Nanoribbon Tunneling FETs
TL;DR: In this article, a detailed simulation study on the currentvoltage characteristics of ballistic graphene nanoribbon (GNR) tunneling FETs of different widths with varying temperatures and channel length is presented.
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Quantum transport simulations of graphene nanoribbon devices using Dirac equation calibrated with tight-binding π-bond model
TL;DR: An efficient approach to study the carrier transport in graphene nanoribbon (GNR) devices using the non-equilibrium Green's function approach (NEGF) based on the Dirac equation calibrated to the tight-binding π-bond model for graphene is presented.
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Self-Consistent SchrÖdinger–Poisson Simulations on Capacitance–Voltage Characteristics of Silicon Nanowire Gate-All-Around MOS Devices With Experimental Comparisons
Sai-Kong Chin,V. Ligatchev,S.C. Rustagi,Hui Zhao,Ganesh S. Samudra,Navab Singh,G. Q. Lo,Dim-Lee Kwong +7 more
TL;DR: In this article, a self-consistent Schrodinger-Poisson solver was used to simulate room temperature capacitance-voltage characteristics of silicon (Si) nanowire gate-all-around MOS structures with radius les 10 nm.
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Influence of contact doping on graphene nanoribbon heterojunction tunneling field effect transistors
TL;DR: In this article, the performance of graphene nanoribbon tunneling field-effect transistors with heterogeneous channel as a function of the contact doping concentrations was investigated, and the role of symmetric and asymmetric contact doping concentration on the device performance was identified.