S
Shengli Zhang
Researcher at Nanjing University of Science and Technology
Publications - 196
Citations - 13941
Shengli Zhang is an academic researcher from Nanjing University of Science and Technology. The author has contributed to research in topics: Band gap & Chemistry. The author has an hindex of 42, co-authored 150 publications receiving 9800 citations. Previous affiliations of Shengli Zhang include Nanjing University.
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CsPbX3 Quantum Dots for Lighting and Displays: Room-Temperature Synthesis, Photoluminescence Superiorities, Underlying Origins and White Light-Emitting Diodes
TL;DR: In this paper, a room-temperature (RT) synthesis of CsPbX3@X quantum-well band alignment is proposed to guarantee the excitons generation and high-rate radiative recombination at RT.
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Atomically Thin Arsenene and Antimonene: Semimetal-Semiconductor and Indirect-Direct Band-Gap Transitions
TL;DR: Novel 2D mono-elemental semiconductors, namely monolayered arsenene and antimonene, with wide band gaps and high stability were now developed based on first-principles calculations, which could pave the way for transistors with high on/off ratios, optoelectronic devices working under blue or UV light, and mechanical sensors based on new 2D crystals.
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Semiconducting Group 15 Monolayers: A Broad Range of Band Gaps and High Carrier Mobilities
Shengli Zhang,Meiqiu Xie,Fengyu Li,Zhong Yan,Yafei Li,Erjun Kan,Wei Liu,Zhongfang Chen,Haibo Zeng +8 more
TL;DR: A broad range of band gaps and high mobilities of a 2D semiconductor family, composed of monolayer of Group 15 elements (phosphorene, arsenene, antimonene, bismuthene).
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Two-dimensional antimonene single crystals grown by van der Waals epitaxy.
Jianping Ji,Xiufeng Song,Jizi Liu,Zhong Yan,Chengxue Huo,Shengli Zhang,Meng Su,Lei Liao,Wenhui Wang,Zhenhua Ni,Yufeng Hao,Haibo Zeng +11 more
TL;DR: The van der Waals epitaxy growth of few-layer antimonene monocrystalline polygons, their atomical microstructure and stability in ambient condition are reported, showing high electrical conductivity up to 104 S m−1 and good optical transparency in the visible light range, promising in transparent conductive electrode applications.
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Recent progress in 2D group-VA semiconductors: from theory to experiment
Shengli Zhang,Shiying Guo,Zhongfang Chen,Yeliang Wang,Hong-Jun Gao,Julio Gómez-Herrero,Pablo Ares,Félix Zamora,Zhen Zhu,Haibo Zeng +9 more
TL;DR: In this review, the latest theoretical and experimental progress made in the fundamental properties, fabrications and applications of 2D group-VA materials are explored, and perspectives and challenges for the future of this emerging field are offered.