Roman Boettger

TL;DR: This work demonstrates that Ar+ ion irradiation is a powerful post-synthesis technique to tailor the optical properties of the semiconducting tungsten disulfide (WS2) by creating S-vacancies and thus controlling material stoichiometry, and demonstrates that by using the irradiated WS2 as a saturable absorber in a waveguide system, the passively Q-switched laser operations can be optimized.

TL;DR: Ion implantation followed by rear side flash-lamp annealing (r-FLA) is used for the fabrication of heavily doped n-type Ge with high mobility, which enables to exploit the plasmonic properties of Ge for sensing in the mid-infrared spectral range.

TL;DR: The data demonstrate that nano-ripples can enhance short-term SC adhesion and proliferation, drive their actin cytoskeleton spatial organization and sustain long-term cell growth.

TL;DR: In this article, the authors reported on the insulator-to-metal transition in Se-hyperdoped Si layers driven by manipulating the Se concentration via non-equilibrium material processing, i.e. ion implantation followed by millisecond-flash lamp annealing.

TL;DR: In this paper, the authors performed a systematic disordering of B2 Fe60Al40 thin lms, and obtained correlations between the order parameter (S), lattice parameter (a0), and the induced saturation magnetization (Ms).