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Songyou Wang

Researcher at Fudan University

Publications -  190
Citations -  3216

Songyou Wang is an academic researcher from Fudan University. The author has contributed to research in topics: Thin film & Band gap. The author has an hindex of 25, co-authored 184 publications receiving 2475 citations. Previous affiliations of Songyou Wang include Chinese Ministry of Education & United States Department of Energy.

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Enhancement in photoelectric performance of flexible perovskite solar cells by thermal nanoimprint pillar-like nanostructures

Mengyu Gao, +12 more
- 01 Aug 2019 - 
TL;DR: Pillar-like nanostructures were fabricated on surface of ITO/PET directly by thermal nano-imprinting as mentioned in this paper, and the absolute enhancement of short-circuit current density and power conversion efficiency for flexible perovskite solar cells are nearly 0.48-1.75
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Ultrafast crystallization mechanism of amorphous Ge15Sb85 unraveled by pressure-driven simulations

Chong Qiao, +7 more
- 01 Sep 2021 - 
TL;DR: In this article, the authors studied the pressure-driven rapid crystallization behavior of amorphous Ge15Sb85 (a-GS), a technologically important Te-free phase-change material (PCM) that exhibits rapid growth-controlled phase transition.
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Discovering rare-earth-free magnetic materials through the development of a database

Masahiro Sakurai, +21 more
- 11 Nov 2020 - 
TL;DR: An open-access database for magnetic compounds, as well as for magnetic clusters, with a focus on magnets free from rare earths is developed in this paper, where data-intensive methods are used to facilitate the theoretical and experimental design and discovery of new magnetic materials.
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Structural features of chalcogenide glass SiTe: An ovonic threshold switching material

Rongchuan Gu, +8 more
- 02 Aug 2021 - 
TL;DR: In this paper, the authors explored the local structure and electronic properties of a simple OTS material, the amorphous (a-) SiTe, by first-principles calculations, revealing that most of the atoms in a-SiTe obey the 8-N rule in contrast to a-GeTe, a well-studied OMS material.
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Thickness-dependent free-electron relaxation time of Au thin films in near-infrared region

Ming-Ying Zhang, +9 more
- 12 May 2016 - 
TL;DR: In this paper, the authors used near-infrared spectroscopic ellipsometry to show that the free-electron relaxation time is dependent on the film thickness, which is a crucial property to be considered in the design of optical devices.