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Songyou Wang

Researcher at Fudan University

Publications -  190
Citations -  3216

Songyou Wang is an academic researcher from Fudan University. The author has contributed to research in topics: Thin film & Band gap. The author has an hindex of 25, co-authored 184 publications receiving 2475 citations. Previous affiliations of Songyou Wang include Chinese Ministry of Education & United States Department of Energy.

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Unraveling the structural and bonding nature of antimony sesquichalcogenide glass for electronic and photonic applications

TL;DR: In this paper, the authors investigated amorphous Sb-based phase-change materials and found that Sb forms shorter and stronger bonds with Se and S than Te, and the average bonding angles of Se (92.0°) and S (94.1°) show larger distortion than that of Te (91.5°).
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Electronic structure and optical properties of boron suboxide B6O system: First-principles investigations

TL;DR: In this article, the structural, mechanical, electronic, and optical properties of B6O were explored by means of first-principles calculations, such as real and imaginary parts of dielectric functions, refractive index and extinction coefficient, and the comparison of optical properties between the density functional theory (DFT) and G0W0 Bethe-Salpeter equation (G0W 0-BSE) results, were computed and discussed.
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Enhancement of solar absorption by a surface-roughened metal-dielectric film structure

TL;DR: In this article, a solar selective absorber with a multilayered SiO2 (87.0 nm)/Cr (8.3 nm)/SiO2(96.3nm) film structure was designed and fabricated by magnetron sputtering on a surface-roughened copper (Cu) substrate.
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Influence of interface layer on optical properties of sub-20 nm-thick TiO 2 films

TL;DR: In this paper, a constructive and effective method of analyzing interfaces by applying two different optical models consisting of air/TiO2/Ti x Si y O2/Si and air/effective TiO2 layer/Si, respectively, was proposed to investigate the influence of interface layer (IL) on the analysis of optical constants and the determination of band gap.