S
Sumit Agarwal
Researcher at Colorado School of Mines
Publications - 111
Citations - 2226
Sumit Agarwal is an academic researcher from Colorado School of Mines. The author has contributed to research in topics: Silicon & Atomic layer deposition. The author has an hindex of 25, co-authored 90 publications receiving 1868 citations. Previous affiliations of Sumit Agarwal include University of Massachusetts Amherst & National Renewable Energy Laboratory.
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Mechanism of hydrogen-induced crystallization of amorphous silicon
TL;DR: The mechanism of hydrogen-induced crystallization of hydrogenated amorphous silicon films during post-deposition treatment with an H2 (or D2) plasma is reported, which is mediated by the insertion of H atoms into strained Si–Si bonds as the atoms diffuse through the film.
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Surface reaction mechanisms during ozone and oxygen plasma assisted atomic layer deposition of aluminum oxide
TL;DR: The reaction mechanism and the role of the reactive intermediates in the atomic layer deposition (ALD) of aluminum oxide from trimethyl aluminum in conjunction with O(3) and an O(2) plasma is elucidated.
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Well ordered polymer melts from blends of disordered triblock copolymer surfactants and functional homopolymers
TL;DR: In this article, a functional homopolymer is added to Pluronic surfactant melts to facilitate the use of amphiphilic surfactants in the industrial fabrication of structured nanomaterials.
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Absolute densities of N and excited N2 in a N2 plasma
TL;DR: Based on the appearance potential of N2* at ∼12 eV, the authors in this article identified this excited molecule as long-lived N2 (A3Σu+) metastable.
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Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
TL;DR: A plasma-enhanced atomic layer deposition process was developed for the growth of SiNx thin films using Si2Cl6 and NH3 plasma and it is shown that this ALD process leads to films with >95% conformality over high aspect ratio nanostructures with a growth per cycle of ∼1.2 Å.