Sunggi Baik

TL;DR: A high-temperature deposition process that can fabricate arrays of individually addressable metal/ferroelectric/metal nanocapacitors with a density of 176 Gb inch(-2) is reported, which results in excellent ferroelectric properties.

TL;DR: In this article, the authors show that the appearance of abnormal grain growth is inversely related to the doping concentration of silica, and that the thickness of intergranular silicate glass films at the onset of AGG in alumina is constant and estimated to be }3.7 nm.

TL;DR: Barium titanate nanowires synthesized with a surfactant-free hydrothermal method have been characterized by various techniques and the Raman spectra confirm the tetragonal phase of the BaTiO3 Nanowires.

TL;DR: In this article, the effects of MgO doping on sintering and grain growth of alumina in the absence of any other impurities as well as in the presence of various amounts of CaO were investigated using ultrapure (>99.999%) alumina and sintered at 1900°C for 1 h in a clean contamination-free condition.

TL;DR: A reliable approach to in situ control of the oxygen vacancies in TiOx films is reported on and the effect of oxygen vacancies on the resistive switching behavior of TiO(x)-based memory capacitors is thoroughly elucidated.