T
Toshio Kamiya
Researcher at Tokyo Institute of Technology
Publications - 394
Citations - 41346
Toshio Kamiya is an academic researcher from Tokyo Institute of Technology. The author has contributed to research in topics: Amorphous solid & Thin film. The author has an hindex of 76, co-authored 383 publications receiving 38115 citations.
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Journal ArticleDOI
Apparent bipolarity and Seebeck sign inversion in a layered semiconductor : LaZnOP
Kentaro Kayanuma,Hidenori Hiramatsu,Masahiro Hirano,Ryuto Kawamura,Hiroshi Yanagi,Toshio Kamiya,Hideo Hosono +6 more
TL;DR: The optoelectronic properties of a layered mixed-anion compound, LaZnOP, which is expected to be a wide gap $n$-type semiconductor, are examined in this paper.
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Mobility- and temperature-dependent device model for amorphous In–Ga–Zn–O thin-film transistors
Katsumi Abe,Katsumi Abe,Ayumu Sato,Kenji Takahashi,Hideya Kumomi,Hideya Kumomi,Toshio Kamiya,Hideo Hosono +7 more
TL;DR: In this paper, a device model for amorphous In-Ga-Zn-O thin-film transistors (a-IGZO TFTs) that explains temperature dependence is proposed.
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Fabrication of heteroepitaxial thin films of layered oxychalcogenides LnCuOCh (Ln = La–Nd; Ch = S–Te) by reactive solid-phase epitaxy
Hidenori Hiramatsu,Kazushige Ueda,Kouhei Takafuji,Hiromichi Ohta,Masahiro Hirano,Toshio Kamiya,Hideo Hosono +6 more
TL;DR: In this article, a reactive solid-phase epitaxy method was used for growing epitaxial thin films of Cu-based, layered oxychalcogenides (LnCuOCh) on MgO (001) substrates.
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Low and small resistance hole-injection barrier for NPB realized by wide-gap p-type degenerate semiconductor, LaCuOSe:Mg
Hiroshi Yanagi,Maiko Kikuchi,Kibeom Kim,Hidenori Hiramatsu,Toshio Kamiya,Masahiro Hirano,Hideo Hosono +6 more
TL;DR: In this paper, the potential of LaCuOSe:Mg as a transparent hole-injection electrode of organic light-emitting diodes (OLEDs) was examined by employing N,N′-diphenyl-N, N′-bis (1,1′-biphenymyl)-4,4′ -diamine (NPB) for a hole transport layer.
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Thin film and bulk fabrication of room-temperature-stable electride C12A7:e− utilizing reduced amorphous 12CaO · 7Al2O3(C12A7)
TL;DR: In this article, the reduction treatment of crystalline C12A7 thin films with reduced a-C 12A7 was used to obtain a non-equilibrium phase of a 12SrO·7Al2O3 with the same crystal structure.