T
Toshio Kamiya
Researcher at Tokyo Institute of Technology
Publications - 394
Citations - 41346
Toshio Kamiya is an academic researcher from Tokyo Institute of Technology. The author has contributed to research in topics: Amorphous solid & Thin film. The author has an hindex of 76, co-authored 383 publications receiving 38115 citations.
Papers
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Journal ArticleDOI
Epitaxial Growth and Application of Transparent Oxide Semiconductors
Journal ArticleDOI
Fabrication and characterization of (CaxSr1-x)Si2 films prepared by co-sputtering method
Kodai Aoyama,Takao Shimizu,Hideto Kuramochi,Masami Mesuda,Ryo Akiike,Keisuke Ide,Takayoshi Katase,Toshio Kamiya,Yoshisato Kimura,Hiroshi Funakubo +9 more
TL;DR: TheSi2 thin films have been prepared by co-sputtering method at various deposition temperatures, and the phase of the films primarily depends on the deposition temperature and the composition x as mentioned in this paper.
Book ChapterDOI
Photoelectron Spectroscopic Study of Energy Level Alignment at C12A7:e‐ / Alq3 Interfaces
Kibeom Kim,Maiko Kikuchi,Masashi Miyakawa,Hiroshi Yanagi,Toshio Kamiya,Masahiro Hirano,Hideo Hosono +6 more
Tunnel barrier properties in polycrystalline-Si single-electron transistors”,
TL;DR: In this article, the electrical and structural properties of tunnel barriers in polycrystalline-Si single-electron transistors are discussed. And the relationship between tunnel barrier parameters and Coulomb blockade characteristics is investigated by comparing as-prepared and oxidized devices.
Journal ArticleDOI
Particulate Generation on Surface of Iron Selenide Films by Air Exposure.
TL;DR: In this article, Nanometer-sized particular structures are generated on the surfaces of FeSe epitaxial films directly after exposure to air; this phenomenon was studied in the current work because these structures are an obstacle to field-induced superconductivity in electric double-layer transistors using FeSe channel layers.