Toshio Kamiya

TL;DR: The epitaxial growth of Fe-based superconductors such as Co-doped BaFe 2 As 2 (SrFe 2As 2 :Co) was reported recently, but has still insufficient properties for a device application because they are decomposed by reactions with water vapor in an ambient atmosphere as discussed by the authors.

TL;DR: In this article, the atomic arrangements and the electronic structures of crystalline InGaZnO4 containing point defects such as oxygen vacancy (VO), interstitial hydrogen (Hi), and interstitial oxygen (Oi) were investigated using a plane-wave pseudopotential method.

TL;DR: In this paper, the main objective of this review is to provide an idea of how to create new functions in oxides and how to find suitable applications only oxides can realize.

TL;DR: Kim et al. as discussed by the authors showed that high partial pressures of oxygen gas during rapid laser deposition transforms amorphous gallium oxide films into semiconductors, achieving an electron Hall mobility of 8.5 cm2V−1.

TL;DR: In this article, diffusion-limited Schottky junctions were fabricated at 200°C by employing a top amorphous In-Ga-Zn-O (a-IGZO)/bottom Pt electrode structure.