T
Toshio Kamiya
Researcher at Tokyo Institute of Technology
Publications - 394
Citations - 41346
Toshio Kamiya is an academic researcher from Tokyo Institute of Technology. The author has contributed to research in topics: Amorphous solid & Thin film. The author has an hindex of 76, co-authored 383 publications receiving 38115 citations.
Papers
More filters
Journal ArticleDOI
P.142L: Late-News Poster: Electron Injecting Material for OLEDs driven by Oxide TFTs: Amorphous C12A7 Electride
Satoru Watanabe,Toshinari Watanabe,Kazuhiro Ito,Naomichi Miyakawa,Yoshitake Toda,Yudai Tomota,Setsuro Ito,Toshio Kamiya,Hideo Hosono +8 more
TL;DR: In this article, a transparent thin film of amorphous 12CaO·7Al2O3 electride, sputter-deposited at RT, having work function of 2.9 − 3.1 eV, was found to act as a good electron injection layer for OLED, and was adequate in combination with n-channel IGZO-TFTs.
Journal ArticleDOI
Pressure effects on superconducting and structural properties for nickel-based superconductors LaNiXO (X = P and As)
Hironari Okada,Yuki Takahashi,Kazumi Igawa,Kazunobu Arii,Hiroki Takahashi,Takumi Watanabe,Hiroshi Yanagi,Yoichi Kamihara,Toshio Kamiya,Masahiro Hirano,Hideo Hosono,Satoshi Nakano,Takumi Kikegawa +12 more
TL;DR: In this paper, electrical resistivity and powder X-ray diffraction measurements under high pressures for nickel-based superconducors LaNiXO (X = P and As) were performed.
Journal ArticleDOI
Improvement of transport properties for polycrystalline silicon prepared by plasma-enhanced chemical vapor deposition
TL;DR: In this article, the carrier transport property of polycrystalline silicon thin films was studied in relation to film microstructure, impurity, in situ or postannealing treatments to obtain better carrier transport properties.
Journal ArticleDOI
Improved p-i-n solar cells structure for narrow bandgap a-Si:H prepared by Ar* chemical annealing at high temperatures
TL;DR: In this paper, improved device structures including transparent conductive oxide (TCO) and p-layers were studied for better photovoltaic performance with narrow bandgap a-Si:H solar cells prepared in p-I-n sequence on TCO-coated glass.