scispace - formally typeset
T

Toshio Kamiya

Researcher at Tokyo Institute of Technology

Publications -  394
Citations -  41346

Toshio Kamiya is an academic researcher from Tokyo Institute of Technology. The author has contributed to research in topics: Amorphous solid & Thin film. The author has an hindex of 76, co-authored 383 publications receiving 38115 citations.

Papers
More filters
Journal ArticleDOI

Excitonic blue luminescence from p-LaCuOSe∕n-InGaZn5O8 light-emitting diode at room temperature

TL;DR: In this article, a hetero p∕n junction diode was fabricated by laminating an amorphous n-type InGaZn5O8 layer to a p-type LaCuOSe film epitaxially grown on a MgO (001) substrate.
Journal ArticleDOI

Electrical Properties and Structure of p-Type Amorphous Oxide Semiconductor xZnO·Rh2O3

TL;DR: In this article, optoelectronic and structural properties are reported in detail for xZnO·Rh2O3 thin films in relation to the chemical composition x. All the films exhibit positive Seebeck coefficients, confirming p-type conduction.
Journal ArticleDOI

Holographic writing of volume-type microgratings in silica glass by a single chirped laser pulse

TL;DR: In this article, the volume-type gratings were holographically encoded inside pure SiO2 glass plates by a single chirped (0.5-5 ps duration) laser pulse generated from a mode-locked Ti:sapphire laser (wavelength ∼800 nm, emission pulse duration ∼100 fs).
Journal ArticleDOI

Intralayer A-Site Compositional Engineering of Ruddlesden–Popper Perovskites for Thermostable and Efficient Solar Cells

TL;DR: In this paper, a joint theoretical analysis of layered Ruddlesden-Popper (RP) perovskites is presented, where the authors show that the thermal stability of the layered perovskiy is improved through joint theoretical and experimental analysis.
Journal ArticleDOI

Amorphous In–Ga–Zn–O Dual-Gate TFTs: Current–Voltage Characteristics and Electrical Stress Instabilities

TL;DR: In this paper, the authors studied the electrical characteristics and electrical stress instabilities of amorphous In-Ga-Zn-O (-IGZO) dual-gate thin-film transistors (DG TFTs).