T
Toshio Kamiya
Researcher at Tokyo Institute of Technology
Publications - 394
Citations - 41346
Toshio Kamiya is an academic researcher from Tokyo Institute of Technology. The author has contributed to research in topics: Amorphous solid & Thin film. The author has an hindex of 76, co-authored 383 publications receiving 38115 citations.
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Electronic structure of interstitial hydrogen in In-Ga-Zn-O semiconductor simulated by muon
K. M. Kojima,Masatoshi Hiraishi,H. Okabe,Akihiro Koda,Ryosuke Kadono,Keisuke Ide,Satoru Matsuishi,Hideya Kumomi,Toshio Kamiya,Hideo Hosono +9 more
TL;DR: In this paper, the local electronic structure of interstitial muon (Mu) as pseudo-hydrogen in In-Ga-Zn oxide (IGZO) semiconductor was studied by muon spin rotation/relaxation ($\mu$SR) experiment.
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Multiple states and roles of hydrogen in p-type SnS semiconductors.
TL;DR: The native p-type conduction in the actual SnS semiconductors is caused mainly by the H-on-Sn (HSn) acceptors, rather than the previously reported Sn vacancies (VSn) for pure SnS.
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Origin of high-density hole doping and anisotropic hole transport in a wide gap layered semiconductor LaCuOSe studied by first-principles calculations
TL;DR: In this article, a wide gap (Eg = 2.8 eV) p-type semiconductor, LaCuOSe, was examined by density functional theory (DFT) calculations and showed that substitution of the La site with an Mg ion needs a large extra energy and is not stable.
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Photoconductivity gain over 10 at a large electric field in wide gap a-Si:H
TL;DR: Wide band gap amorphous silicon films and p-i-n diodes were prepared by a chemical annealing method as mentioned in this paper, and they had dark conductivities consistent with the large band gaps, low impurity levels, intrinsic conduction, and corresponding low thermal generation rates.
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Anisotropic carrier transport in preferentially oriented polycrystalline silicon films fabricated by very-high-frequency plasma enhanced chemical vapor deposition using fluorinated source gas
TL;DR: In this article, structural and transport anisotropy of low temperature polycrystalline silicon (poly-Si) were studied using very high-frequency chemical vapor deposition from SiF 4 and H 2 mixtures.