T
Toshitsugu Sakamoto
Researcher at NEC
Publications - 224
Citations - 3567
Toshitsugu Sakamoto is an academic researcher from NEC. The author has contributed to research in topics: Electrode & Crossbar switch. The author has an hindex of 29, co-authored 221 publications receiving 3435 citations. Previous affiliations of Toshitsugu Sakamoto include Korea University.
Papers
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Journal ArticleDOI
Area-efficient nonvolatile carry chain based on pass-transistor/atom-switch hybrid logic
Bai Xu,Yukihide Tsuji,Toshitsugu Sakamoto,Ayuka Morioka,Makoto Miyamura,Munehiro Tada,Naoki Banno,Koichiro Okamoto,Noriyuki Iguchi,Hiromitsu Hada +9 more
TL;DR: In this article, an area-efficient nonvolatile carry chain combining look-up tables and a pass-transistor-logic-based adder was developed using complementary atom switches without additional CMOS circuits.
Journal ArticleDOI
A Silicon-on-Thin-Buried-Oxide CMOS Microcontroller with Embedded Atom-Switch ROM
Toshitsugu Sakamoto,Yukihide Tsuji,Munehiro Tada,Hideki Makiyama,Takumi Hasegawa,Yoshiki Yamamoto,Shinobu Okanishi,Keiichi Maekawa,Naoki Banno,Makoto Miyamura,Koichiro Okamoto,Noriyuki Iguchi,Hidekazu Oda,Shiro Kamohara,Yasushi Yamagata,Nobuyuki Sugii,Hiromitsu Hada,Yasuhiro Ogasahara +17 more
TL;DR: An ultra-low-power microcontroller unit (MCU) with an embedded atom-switch ROM, which performs 0.39-V operation voltage and 18.26-pJ/cycle minimum active energy at 14.3 MHz, is demonstrated.
Patent
Switching element and method for fabricating semiconductor switching device
TL;DR: In this paper, a switching element according to the present invention is equipped with a first variable resistance element equipped with an input/output terminal and a first connection terminal, a second variable resistor equipped with two inputs/output terminals, and a second connection terminal.
Patent
Variable resistance element, semiconductor device including variable resistance element, and methods for manufacturing variable resistance element and semiconductor device
TL;DR: A variable resistance element includes a first electrode, a second electrode and an ion conduction layer interposed between the first and second electrodes as discussed by the authors, which contains an organic oxide containing at least oxygen and carbon.
Journal Article