T
Toshitsugu Sakamoto
Researcher at NEC
Publications - 224
Citations - 3567
Toshitsugu Sakamoto is an academic researcher from NEC. The author has contributed to research in topics: Electrode & Crossbar switch. The author has an hindex of 29, co-authored 221 publications receiving 3435 citations. Previous affiliations of Toshitsugu Sakamoto include Korea University.
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Patent
Resistance change element and method of manufacturing the same and semiconductor device
TL;DR: A resistance change element as discussed by the authors is a first insulating film provided on a semiconductor substrate formed on a transistor, which supplies metal ion, and second and third electrodes connecting to upper surfaces of the first and second resistance change films; a fifth electrode connecting to the third and fourth electrodes and to a diffusion layer of the transistor.
Journal ArticleDOI
Logic compatible process technology for embedded atom switches in CMOS
Koichiro Okamoto,Munehiro Tada,Naoki Banno,Noriyuki Iguchi,Toshitsugu Sakamoto,Hiromitsu Hada +5 more
TL;DR: In this article, a CMOS logic compatible process for embedding Cu atom switches in a Cu/low-k back-end-of-line without degrading interconnect and switch performance characteristics is presented.
Patent
Numerical information generation apparatus, numerical information generation method, and program
TL;DR: In this article, a numerical information generation device that reduces the man hours that characterise a crossbar switch composed of a variable-resistance element is presented, where an input unit inputs information of a programmable logic integrated circuit including a plurality of crossbar switches.
Patent
Crossbar switch and method of manufacturing the same and semiconductor device
TL;DR: In this article, a crossbar switch comprising of a first interconnect, a second interconnect and a resistance change element is described, where the resistance change elements are embedded in a first insulating film on a substrate having a transistor.