V
Valentin Dediu
Researcher at National Research Council
Publications - 112
Citations - 5041
Valentin Dediu is an academic researcher from National Research Council. The author has contributed to research in topics: Organic semiconductor & Spintronics. The author has an hindex of 28, co-authored 107 publications receiving 4670 citations.
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Room temperature spin polarized injection in organic semiconductor
TL;DR: In this article, the first experimental evidence of room temperature direct spin polarized injection in sexithienyl (T 6 ), a prototypical organic semiconductor, from colossal magnetoresistance manganite La 0.7 Sr 0.3 MnO 3 (LSMO), was reported.
Journal Article
Spin Routes in Organic Semiconductors
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Unravelling the role of the interface for spin injection into organic semiconductors
Clément Barraud,Pierre Seneor,Richard Mattana,Stéphane Fusil,Stéphane Fusil,Karim Bouzehouane,Cyrile Deranlot,Patrizio Graziosi,Luis E. Hueso,Ilaria Bergenti,Valentin Dediu,Frédéric Petroff,Albert Fert +12 more
TL;DR: In this paper, the metal/organic interface is found to be key for spin injection in organic semiconductors, and the authors investigated how to optimize the injection of spin into these materials.
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A novel route in bone tissue engineering: Magnetic biomimetic scaffolds
Nathalie Bock,Alberto Riminucci,Chiara Dionigi,Alessandro Russo,Anna Tampieri,Elena Landi,Vitaly Goranov,Maurilio Marcacci,Valentin Dediu +8 more
TL;DR: Preliminary studies indicate the ability of the magnetic scaffolds to support adhesion and proliferation of human bone marrow stem cells in vitro, and this new type of scaffold is a valuable candidate for tissue engineering applications, featuring a novel magnetic guiding option.
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Room-temperature spintronic effects in Alq3-based hybrid devices
Valentin Dediu,Luis E. Hueso,Ilaria Bergenti,Alberto Riminucci,Francesco Borgatti,Patrizio Graziosi,Carol Newby,Francesca Casoli,M. P. de Jong,C. Taliani,Yiqiang Zhan +10 more
TL;DR: In this paper, vertical spin valve devices with a direct interface between the bottom manganite electrode and Alq3, while the top-electrode geometry consists of an insulating tunnel barrier placed between the soft organic semiconductor and the top Co electrode.