V
Viorel Banu
Researcher at Spanish National Research Council
Publications - 57
Citations - 627
Viorel Banu is an academic researcher from Spanish National Research Council. The author has contributed to research in topics: Schottky diode & Diode. The author has an hindex of 12, co-authored 57 publications receiving 557 citations. Previous affiliations of Viorel Banu include Autonomous University of Barcelona.
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Journal ArticleDOI
SiC Schottky Diodes for Harsh Environment Space Applications
Philippe Godignon,X. Jorda,Miquel Vellvehi,Xavier Perpiñà,Viorel Banu,D. Lopez,J. Barbero,Pierre Brosselard,S. Massetti +8 more
TL;DR: The manufactured diodes demonstrated high stability for a continuous operation at 285 °C and the use of gold metallization and gold wire bonds on the anode allows reducing the diode surface and bonding degradation when compared to Al-containing technology.
Journal ArticleDOI
Thermomechanical Assessment of Die-Attach Materials for Wide Bandgap Semiconductor Devices and Harsh Environment Applications
Luis A. Navarro,Xavier Perpiñà,Philippe Godignon,Josep Montserrat,Viorel Banu,Miquel Vellvehi,X. Jorda +6 more
TL;DR: In this paper, a comparative analysis of the thermomechanical performance of high-temperature die-attach materials (sintered nano-Ag, AuGe, and PbSnAg) under harsh thermal cycling tests is presented.
Journal ArticleDOI
SiC Integrated Circuit Control Electronics for High-Temperature Operation
Mihaela Alexandru,Viorel Banu,X. Jorda,Josep Montserrat,Miquel Vellvehi,Dominique Tournier,José Millan,Philippe Godignon +7 more
TL;DR: A prototype set of essential mixed-signal ICs on SiC capable of controlling power switches and a lateral power MESFET able to operate at high temperatures, all embedded on the same chip.
Journal ArticleDOI
Bipolar Conduction Impact on Electrical Characteristics and Reliability of 1.2- and 3.5-kV 4H-SiC JBS Diodes
Pierre Brosselard,Nicolas Camara,Viorel Banu,X. Jorda,Miquel Vellvehi,Philippe Godignon,José Millan +6 more
TL;DR: In this paper, the authors used 1.2 and 3.4H-SiC junction barrier Schottky (JBS) diodes with two different layouts for DC electrical stresses.
Proceedings ArticleDOI
A HfO 2 based 800V/300°C Au-free AlGaN/GaN-on-Si HEMT technology
A. Fontserè,Amador Pérez-Tomás,Viorel Banu,Phillippe Godignon,José Millan,H. De Vleeschouwer,J. Parsey,Peter Moens +7 more
TL;DR: In this paper, a high performance AlGaN/GaN MIS gated HEMT (MIS-HEMT) and passivated high electron mobility transistors (HEMTs) fabricated with a 4-inch Si CMOS compatible technology are presented.