Peter Moens

TL;DR: In this article, the authors identify the causes of dynamic dispersion using substrate bias ramps to isolate the leakage paths and trapping locations in the epitaxy and simulation to identify their impact on the device characteristics.

TL;DR: This Roadmap presents the current state-of-the-art and future challenges in 15 different topics identified by a large number of people active within the gallium oxide research community to enhance the state-ofthe-art device performance and allow for efficient, high-power, commercially scalable microelectronic systems using the newest semiconductor platform.

TL;DR: In this paper, an industrial DHEMT process for 650V rated GaN-on-Si power devices is described, which uses an in-situ MOCVD grown SiN as surface passivation and gate dielectric.

TL;DR: In this article, a strong positive correlation between dynamic Ron and the ionization of buffer traps by injection of electrons from the Si substrate is presented, which in turn results in lower dynamic Ron.

TL;DR: In this article, the authors investigated the trapping mechanisms responsible for the temperature-dependent dynamic of GaN-based metal-insulator-semiconductor (MIS) high electron mobility transistors (HEMTs).