Showing papers by "Vivek Garg published in 2020"
TL;DR: In this paper, an analytical and simulation evaluation of multiple quantum well solar cells (MQWSC) with CdZnO/ZnOs as the intrinsic layer, Sb-doped ZnO (SZO) as a p-type layer, and GZO as an n- type layer of the p-i-n solar cell (SC).
Abstract: This article presents analytical and simulation evaluation of multiple quantum well solar cells (MQWSC) with CdZnO/ZnO as the intrinsic layer, Sb-doped ZnO (SZO) as a p-type layer, and Ga-doped ZnO (GZO) as an n-type layer of the p-i-n solar cell (SC). The material parameters used in this article are obtained from the experimental reports on the properties of ZnO and CdZnO thin films grown by dual-ion-beam sputtering (DIBS). The American Society for Testing and Materials (ASTM) standards data sheets have been utilized for attaining photon flux density instead of the blackbody radiation formula. The analytically obtained results show good agreement with the simulated results obtained by the ATLAS simulation tool. The variation of device performance parameters is examined for thermal stability. The results show that, for the proposed ZnO-based MQWSC, the open-circuit voltage ( ${V}_{{\text {oc}}}$ ) has a negative temperature coefficient (−2.63 mV/°C), and short-circuit current density ( ${J}_{{\text {sc}}}$ ) and conversion efficiency ( ${\eta }$ ) have positive temperature coefficients of $2.43\times 10^{{-{3}}} \,\,{\text {mA}/\text {cm}^{{{2}}}\cdot ^{\circ }}\text{C}$ and $2.91\times 10^{{-{3}}}$ %/°C, respectively. Further, the device performance has been explored for variation in the number of quantum wells. The results present that an increase in the number of quantum wells has a negative impact on the performance parameters of ZnO-based MQWSC.
13 citations
TL;DR: In this article, a dual ion beam sputtering (DIBS) system at different deposition conditions in terms of ion beam power, substrate temperature, and time cessation between deposition of successive layers is discussed systematically.
Abstract: Multiple quantum wells (MQWs) of CdZnO/ZnO are realized, for the first time, by dual ion beam sputtering (DIBS) system at different deposition conditions in terms of ion beam power, substrate temperature, and time cessation between deposition of successive layers. The effects of DIBS deposition conditions are analyzed by secondary ion mass spectroscopy (SIMS) and high-resolution transmission electron microscopy (HRTEM) and discussed systematically. The SIMS analysis has been used for depth profiling of CdZnO/ZnO-based MQWs structure. The deposition of CdZnO/ZnO-based MQW structure performed at 100 °C with time cessation of 30 min between successive layer growth and ion beam power of 14 W has displayed the best results in terms of distinct well and barrier layers formation. This work also includes an analytical study of CdZnO/ZnO-based MQW solar cell (MQWSC), in which a study is performed for solar irradiance dependence of performance parameters to explore the potential use of CdZnO/ZnO-based MQWSC for concentrator solar cell (SC). The short-circuit current density increases from 0.12 to 57.98 mA/cm2, the open-circuit voltage rises from 2.60 to 2.77 V, and the photon conversion efficiency is from 2.85% to 3.04%, as solar irradiance increases from 0.1 to 50 suns. The results show that the performance of SCs can be improved by using concentrators and also explore the possibility of efficiently absorbing short-wavelength photons.
10 citations
10 Jul 2020
TL;DR: In this paper, the effect of back-gate voltage on sensing metric of Dielectric Modulated (DM) Tunnel Field Effect Transistor (TFET) biosensor was investigated. And the drain current sensitivity and selectivity for three different values of back gate voltage were calculated.
Abstract: In this work, we investigate the effect of back-gate voltage on sensing metric of Dielectric Modulated (DM) Tunnel Field Effect Transistor (TFET) biosensor. Under this work we have investigated transfer characteristics, the variation of energy band, and hole concentration with back gate voltage and calculated the drain current sensitivity and selectivity for three different value of back-gate voltage. In this work, we have shown that with positive back gate voltage, drain current sensitivity is improved by nearly one order of magnitude and selectivity value is also enhanced by more than 2 times.
2 citations
01 Jul 2020
TL;DR: In this article, the effect of applied bias on the metal-semiconductor interface to affect resistive switching of an RRAM device was analyzed. And the authors demonstrated an analytical model that shows the effect that applied bias has on the surface of the metal and showed that the change in bias affects the distribution of bulk defects.
Abstract: Resistive Random Access Memories (RRAMs) or Memristor has been a revolution in current nonvolatile memory technology. This work demonstrates an analytical model that shows the effect of applied bias on the metal-semiconductor interface to affect resistive switching of an RRAM device. The applied bias modulates the corresponding interface in terms of various interfacial electrical parameters. Besides, the change in bias affects the distribution of bulk defects primarily oxygen vacancies as well as non-lattice oxygen ions. This, in turn, also affects the corresponding resistance of bulk as well as other electrical parameters at the interface. Further conduction mechanism of the device with interfacial oxide formation as well as dissolution to impact resistive switching behavior has been elaborated.
1 citations