Journal ArticleDOI
Enhanced AlGaN/GaN MOS-HEMT Performance by Using Hydrogen Peroxide Oxidation Technique
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TLDR
In this article, a 13-nm-thick Al2O3 oxide was grown upon the surface of AlGaN barrier layer and served as the gate dielectric layer and the surface passivation layer at the same time to effectively decrease gate leakage current and prevent RF current current collapse, which are the critical issues of nitride HEMTs.Abstract:
This paper investigates enhanced device characteristics of AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (HEMT) (MOS-HEMT) fabricated by using hydrogen peroxide (H2O2) oxidation technique which demonstrates the advantages of simplicity and cost effectiveness. A 13-nm-thick Al2O3 oxide was grown upon the surface of AlGaN barrier layer and served as the gate dielectric layer and the surface passivation layer at the same time to effectively decrease gate leakage current and prevent RF current collapse, which are the critical issues of nitride HEMTs. Enhanced device performances of dc, RF, power, and reliability of the present MOS-HEMT are comprehensively investigated as compared with a conventional Schottky-gate HEMT.read more
Citations
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Journal ArticleDOI
Review—Ionizing Radiation Damage Effects on GaN Devices
TL;DR: In this article, the radiation resistance of GaN-based blue light emitting diodes (LEDs) to different types of ionizing radiation, and the role of existing defects in GaN are discussed.
Journal ArticleDOI
Recent advances on dielectrics technology for SiC and GaN power devices
Fabrizio Roccaforte,Patrick Fiorenza,Giuseppe Greco,Marilena Vivona,R. Lo Nigro,Filippo Giannazzo,Alfonso Patti,Mario Saggio +7 more
TL;DR: In this article, the authors reviewed some recent advances in dielectrics technology currently adopted to optimize the performances of SiC and gallium nitride transistors, focusing on the optimization of SiO2/SiC interfaces in 4H-SiC MOSFETs by passivation processes of the gate oxides.
Journal ArticleDOI
A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability
Fanming Zeng,Judy Xilin An,Guangnan Zhou,Wenmao Li,Hui Wang,Tianli Duan,Jiang Lingli,Hongyu Yu +7 more
TL;DR: In this paper, the authors review recent progress in AlGaN/GaN HEMTs, including the following sections: challenges in device fabrication and optimizations, and some promising device structures from simulation studies.
Journal ArticleDOI
Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors
TL;DR: The chemical composition and optical properties of the Ga2O3 thin films were investigated; the saturation growth displayed a linear dependence with respect to the number of ALD cycles, and the direct-current and radio-frequency performances of the MOS-HEMT device were greater than those of the conventional HEMT.
Journal ArticleDOI
Power-switching applications beyond silicon: Status and future prospects of SiC and GaN devices
TL;DR: In this article, the development of SiC and GaN devices for power-switching applications in the context of four specifically identified application requirements: (1) high blocking voltage, (2) high power efficiency, (3) high switching speed, and (4) normally OFF operation.
References
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Journal ArticleDOI
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
Oliver Ambacher,Joseph A. Smart,James R. Shealy,Nils Weimann,K. Chu,M. J. Murphy,William J. Schaff,L.F. Eastman,Roman Dimitrov,L. Wittmer,Martin Stutzmann,W. Rieger,J. Hilsenbeck +12 more
TL;DR: In this article, the authors investigated the role of spontaneous and piezoelectric polarization on the carrier confinement at GaN/AlGaN and AlGaN/GaN interfaces.
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The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
TL;DR: In this article, the authors show that the cause of current collapse is a charging up of a second virtual gate, physically located in the gate drain access region, thus acting as a negatively charged virtual gate.
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The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs
TL;DR: In this paper, the authors reported the highest reported microwave power density for undoped sapphire substrated AlGaN/GaN HEMT's on the same wafer.
Journal ArticleDOI
GaN HEMT reliability
J.A. del Alamo,Jungwoo Joh +1 more
TL;DR: This paper reviews the experimental evidence behind a new failure mechanism recently identified in GaN high-electron mobility transistors subject to electrical stress and suggests several paths to enhance the electrical reliability of GaN HEMTs.
Journal ArticleDOI
AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor
TL;DR: In this paper, the authors report on the AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor (MOS-HFET) and present the results of the comparative studies of this device and a base line AlGa n/Ga n heterostructured transistor (HFET), for a 5/spl mu/ source-to-drain opening, the maximum current was close to 600 mA/mm for both devices.