G. Pozzovivo

TL;DR: In this article, degradation of lattice-matched unpassivated InAlN/GaN high-electron-mobility transistors (HEMTs) was analyzed by measuring the drain current, a threshold voltage, a Schottky contact barrier height, a gate leakage and an ideality factor, an access, and an intrinsic channel resistance.

TL;DR: In this article, the authors discuss the specific features of ISB active region design using GaN/AlGaN materials, and show that the ISB wavelength can be tailored in a wide spectral range from near-to long infrared wavelengths by engineering the internal electric field and layer thicknesses.

TL;DR: In this article, gate insulation and surface passivation using Zr or Hf was applied to 2m gate-length MOS HEMTs to reduce the gate leakage current by four orders of magnitude and a 2.5 increase of the pulsed drain-current.

TL;DR: In this paper, the authors investigated 2μm gate-length InAlN∕GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS HEMTs) with 12nm thick Al2O3 gate insulation.

TL;DR: In this paper, metal organic chemical vapour deposition (MOCVD) of HfO2 and ZrO2 from β-diketonate precursors was applied to grow high-k gate dielectrics for InAlN/Aln/GaN metal oxide semiconductor (MOS)-high electron mobility transistors (HEMTs).