Xing Gu

TL;DR: In this paper, the optical properties of a high quality bulk ZnO, thermally post treated in a forming gas environment are investigated by temperature dependent continuous wave and time-resolved photoluminescence (PL) measurements.

TL;DR: Using time-domain thermoreflectance along with electron energy loss spectroscopy, it is determined that a SiN interfacial layer provided the lowest thermal boundary resistance (<10 m2K/GW) because of the formation of an Si-C-N layer at the interface.

TL;DR: GaN-on-diamond device cooling can be enhanced by reducing the effective thermal boundary resistance (TBReff) of the GaN/diamond interface and the thermal properties of the polycrystalline diamond grown onto GaN using SiN and AlN barrier layers as well as without any barrier layer under different growth conditions are investigated and systematically compared for the first time.

TL;DR: In this article, a two-dimensional growth mode was achieved by annealing a basal plane ZnO with atomically flat and terrace-like features by molecular beam epitaxy, and high-resolution x-ray diffraction scans, with no Ga2ZnO4 phase detectable.

TL;DR: In this article, the authors measured the thermal conductivities of bulk ZnO samples under different conditions using scanning thermal microscopy and showed that surface carrier concentration as well as surface morphology affected thermal conductivity.