Y
Y. Liu
Researcher at Nanyang Technological University
Publications - 36
Citations - 372
Y. Liu is an academic researcher from Nanyang Technological University. The author has contributed to research in topics: Thin film & Ion implantation. The author has an hindex of 10, co-authored 31 publications receiving 358 citations. Previous affiliations of Y. Liu include University of Electronic Science and Technology of China.
Papers
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A study on Si nanocrystal formation in Si-implanted SiO2 films by x-ray photoelectron spectroscopy
TL;DR: In this paper, X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTI) were used to study Si nanocrystal formation in Si-implanted SiO2 films.
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Visualizing charge transport in silicon nanocrystals embedded in SiO2 films with electrostatic force microscopy
TL;DR: In this article, the authors reported a mapping of charge transport in silicon nanocrystals (nc-Si) embedded in SiO2 dielectric films with electrostatic force microscopy.
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Static dielectric constant of isolated silicon nanocrystals embedded in a SiO2 thin film
TL;DR: The static dielectric constant of isolated silicon nanocrystals (nc-Si) embedded in a SiO2 thin film synthesized by Si+ implantation has been determined from capacitance measurement based on the Maxwell-Garnett effective medium approximation and the stopping and range of ions in matter simulation.
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Charging Effect on Electrical Characteristics of MOS Structures with Si Nanocrystal Distribution in Gate Oxide
Y. Liu,Tupei Chen,C. Y. Ng,Man Siu Tse,Stevenson Hon Yuen Fung,Y. C. Liu,Simon Y.W. Li,Ping Zhao +7 more
TL;DR: In this article, the influence of charge trapping in Si nanocrystals (nc-Si) on the current and capacitance of metal-oxide-semiconductor (MOS) structures was investigated.
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Thermal annealing effect on the band gap and dielectric functions of silicon nanocrystals embedded in SiO2 matrix
TL;DR: The thermal annealing effect on band gap and dielectric functions of silicon nanocrystals (nc-Si) embedded in a SiO2 matrix synthesized by Si ion implantation is investigated by spectroscopic ellipsometry as mentioned in this paper.