Charging Effect on Electrical Characteristics of MOS Structures with Si Nanocrystal Distribution in Gate Oxide
Y. Liu,Tupei Chen,C. Y. Ng,Man Siu Tse,Stevenson Hon Yuen Fung,Y. C. Liu,Simon Y.W. Li,Ping Zhao +7 more
TLDR
In this article, the influence of charge trapping in Si nanocrystals (nc-Si) on the current and capacitance of metal-oxide-semiconductor (MOS) structures was investigated.Abstract:
We report a study of influence of charging and discharging in Si nanocrystals (nc-Si), which are embedded throughout the gate oxide in metal-oxide-semiconductor (MOS) structures, on the current-voltage and capacitance-voltage characteristics of the MOS structures. Very large current and capacitance are observed for the as-fabricated structures. However, charge trapping in the nanocrystals can reduce both the current and the capacitance dramatically. The trapped charges can also tunnel out from the nc-Si, leading to the recovery of both the current and the capacitance. The current reduction is attributed to the breaking of the nc-Si tunneling paths due to charge trapping in the nc-Si, while capacitance reduction is explained by an equivalent circuit in terms of the change of the nc-Si capacitance as a result of the charge trapping. © 2004 The Electrochemical Society. All rights reserved.read more
Citations
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Core-Level Shift of Si Nanocrystals Embedded in a SiO2 Matrix
TL;DR: In this paper, the core level of Si nanocrystals (nc-Si) embedded in a SiO2 matrix should shift toward a higher binding energy as compared to that of bulk crystalline Si due to quantum size effect.
Journal ArticleDOI
Memory effect of Al-rich AlN films synthesized with rf magnetron sputtering
TL;DR: In this paper, the memory effect of charge trapping in Al nanoparticles/nanoclusters embedded in the AlN matrix was investigated for the metal-insulator-semiconductor structure with a 60nm Al-rich AlN thin film, which is deposited onto n-type Si substrate by radio frequency sputtering of Al target in an argon and N2 gas mixture.
Journal ArticleDOI
Influence of charge trapping on electroluminescence from Si- nanocrystal light emitting structure
Yang Liu,Tupei Chen,Liang Ding,Ming Yang,Jen It Wong,C. Y. Ng,Siu Fung Yu,Zeng Xiang Li,Chau Yuen,Fu Rong Zhu,M. C. Tan,Stevenson Hon Yuen Fung +11 more
TL;DR: In this article, the influence of charge trapping on electroluminescence from Si nanocrystal (nc-Si) distributed throughout a 30nm SiO2 thin film synthesized by Si+ implantation into an oxide film thermally grown on a p-type Si substrate was investigated.
Journal ArticleDOI
The influence of the implantation dose and energy on the electroluminescence of Si+-implanted amorphous SiO2 thin films
TL;DR: In this paper, Si nanocrystals (nc-Si) embedded in the gate oxide fabricated with low-energy ion implantation were found to play an important role in electroluminescence.
Journal ArticleDOI
Si Nanocrystal Memory Devices Self-Assembled by In Situ Rapid Thermal Annealing of Ultrathin a -Si on SiO2
TL;DR: Si-nanocrystal memories have been fabricated using the thermal agglomeration of an ultrathin (0.9-3.5 nm) amorphous Si (a-Si) film as mentioned in this paper.
References
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Light emitting diode structure based on Si nanocrystals formed by implantation into thermal oxide
Nenad Lalic,Jan Linnros +1 more
TL;DR: In this article, a highly doped poly-Si layer was used to enhance injection into nanocrystals, and visible electroluminescence (EL) was observed from the LEDs with oxide thickness ⩽180 A for bias voltages above 8 V.
Journal ArticleDOI
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Journal ArticleDOI
Room-temperature single-electron charging phenomena in large-area nanocrystal memory obtained by low-energy ion beam synthesis
TL;DR: In this article, the dependence of implantation dose on the charge storage characteristics of large-area n-channel metaloxide-semiconductor field effect transistors with 1-keV Si+-implanted gate oxides was investigated.