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Yunfeng Chen
Researcher at Chinese Academy of Sciences
Publications - 20
Citations - 759
Yunfeng Chen is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Responsivity & Photodetector. The author has an hindex of 7, co-authored 19 publications receiving 239 citations.
Papers
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Journal ArticleDOI
Unipolar barrier photodetectors based on van der Waals heterostructures
Yunfeng Chen,Yang Wang,Yang Wang,Zhen Wang,Yue Gu,Yan Ye,Xuliang Chai,Jiafu Ye,Yan Chen,Runzhang Xie,Yi Zhou,Zhigao Hu,Qing Li,Lili Zhang,Fang Wang,Peng Wang,Jinshui Miao,Jianlu Wang,Xiaoshuang Chen,Wei Lu,Peng Zhou,Weida Hu +21 more
TL;DR: In this article, a band-engineered van der Waals heterostructures were used to construct visible and mid-wavelength infrared unipolar barrier photodetectors.
Journal ArticleDOI
Sensitive and Ultrabroadband Phototransistor Based on Two‐Dimensional Bi2O2Se Nanosheets
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A Noble Metal Dichalcogenide for High‐Performance Field‐Effect Transistors and Broadband Photodetectors
Zhen Wang,Peng Wang,Fang Wang,Jiafu Ye,Ting He,Feng Wu,Meng Peng,Peisong Wu,Yunfeng Chen,Fang Zhong,Runzhang Xie,Zhuangzhuang Cui,Liang Shen,Qinghua Zhang,Lin Gu,Man Luo,Yang Wang,Huawei Chen,Peng Zhou,Anlian Pan,Xiaohao Zhou,Lili Zhang,Weida Hu +22 more
Journal ArticleDOI
WSe2 Photovoltaic Device Based on Intramolecular p-n Junction.
Yicheng Tang,Yicheng Tang,Zhen Wang,Peng Wang,Feng Wu,Yueming Wang,Yunfeng Chen,Hailu Wang,Meng Peng,Chongxin Shan,Zhihong Zhu,Shiqiao Qin,Weida Hu +12 more
TL;DR: High quality p-n junctions based on 2D layered materials (2DLMs) are urgent to exploit, because of their unique properties such as flexibility, high absorption, and high tunability which may be utilized in next-generation photovoltaic devices.
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Air-Stable Low-Symmetry Narrow-Bandgap 2D Sulfide Niobium for Polarization Photodetection.
Yang Wang,Yang Wang,Peisong Wu,Zhen Wang,Man Luo,Fang Zhong,Xun Ge,Kun Zhang,Meng Peng,Yan Ye,Qing Li,Haonan Ge,Jiafu Ye,Ting He,Yunfeng Chen,Tengfei Xu,Tengfei Xu,Chenhui Yu,Yueming Wang,Zhigao Hu,Xiaohao Zhou,Chongxin Shan,Mingsheng Long,Peng Wang,Peng Zhou,Weida Hu +25 more
TL;DR: S sulfide niobium (NbS3), a novel transition metal trichalcogenide semiconductor with low-symmetry structure, is introduced into a narrowband 2D material with strong anisotropic physical properties both experimentally and theoretically.