Z
Zhechao Wang
Researcher at Ghent University
Publications - 83
Citations - 2118
Zhechao Wang is an academic researcher from Ghent University. The author has contributed to research in topics: Silicon photonics & Silicon. The author has an hindex of 19, co-authored 82 publications receiving 1823 citations. Previous affiliations of Zhechao Wang include Zhejiang University & IMEC.
Papers
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Journal ArticleDOI
III-Vs on Si for photonic applications-A monolithic approach
TL;DR: In this article, the authors investigated various kinds of defects present in InP ELOG layers grown by hydride vapor phase epitaxy on Si, and the reason for their presence, as well as strategies for counteracting them, are investigated.
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Heterogeneous Integration on Silicon Photonics
Owen P. Marshall,Mark Hsu,Zhechao Wang,Bernardette Kunert,Christian Koos,Dries Van Thourhout +5 more
TL;DR: This paper discusses the integration of silicon waveguides with ferroelectric materials such as lead zirconate titanate and barium titanate, with electro–optically active polymers, with 2-D materialssuch as graphene and with III–V semiconductors through epitaxy.
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Study of planar defect filtering in InP grown on Si by epitaxial lateral overgrowth
Carl Junesand,Himanshu Kataria,Wondwosen Metaferia,Nick Julian,Zhechao Wang,Yan-Ting Sun,John E. Bowers,Galia Pozina,Lars Hultman,Sebastian Lourdudoss +9 more
TL;DR: In this article, the authors investigated the nature, origin and filtering of extended defects in ELOG layers grown from single and double openings in SiO2 mask, and showed that stacking faults can effectively be filtered under certain conditions.
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III-V-on-silicon anti-colliding pulse-type mode-locked laser.
Shahram Keyvaninia,Sarah Uvin,M. Tassaert,Zhechao Wang,Xin Fu,Sylwester Latkowski,J Marien,L. Thomassen,Francois Lelarge,G-H Duan,Guy Lepage,Peter Verheyen,van J Campenhout,Eajm Erwin Bente,Gunther Roelkens +14 more
TL;DR: An anti-colliding pulse-type III-V-on-silicon passively mode-locked laser is presented for the first time based on a III-v-on -silicon distributed Bragg reflector as outcoupling mirror implemented partially underneath the III- V saturable absorber.
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Towards a monolithically integrated III?V laser on silicon: optimization of multi-quantum well growth on InP on Si
Himanshu Kataria,Carl Junesand,Zhechao Wang,Zhechao Wang,Wondwosen Metaferia,Yan-Ting Sun,Sebastian Lourdudoss,Gilles Patriarche,Alexandre Bazin,Fabrice Raineri,Phil Mages,Nick Julian,John E. Bowers +12 more
TL;DR: In this paper, high quality InGaAsP/InP multi-quantum wells (MQWs) on the isolated areas of indium phosphide on silicon necessary for realizing a monolithically integrated silicon laser is achieved.