Nitte Meenakshi Institute of Technology

About: Nitte Meenakshi Institute of Technology is a based out in . It is known for research contribution in the topics: Computer science & Ultimate tensile strength. The organization has 846 authors who have published 644 publications receiving 2702 citations.

Compressed Sensing for Image Compression: Survey of Algorithms

Abstract: Compressed sensing (CS) is an image acquisition method, where only few random measurements are taken instead of taking all the necessary samples as suggested by Nyquist sampling theorem. It is one of the most active research areas in the past decade. In this age of digital revolution, where we are dealing with humongous amount of digital data, exploring the concepts of compressed sensing and its applications in the field of image processing is very much relevant and necessary. The paper discusses the basic concepts of compressed sensing and advantages of incorporating CS-based algorithms in image compression. The paper also discusses the drawbacks of CS, and conclusion has been made regarding when the CS-based algorithms are effective and appropriate in image compression applications. As an example, reconstruction of an image acquired in compressed sensing way using \( l_{1} \) minimization, total variation-based augmented Lagrangian method and Bregman method is presented.

Facile green synthesis of boroncarbonitride using orange peel; Its application in high-performance supercapacitors and detection of levodopa in real samples

Abstract: From the past few years 2D materials have emerged as a choice of research materials in the field of electrochemistry. Boroncarbonitride (BCN) is one such 2D material synthesized by facile, novel, one-step pyrolysis method using activated carbon obtained by orange peel extract as a source of carbon. Synthesized BCN has been characterized and used as electrode material for supercapacitor applications using cyclic voltammetry (CV), chronopotentiometry (CP) and Electrochemical Impedence Spectroscopy (EIS) techniques. BCN has also been utilized for sensitive detection of levodopa (L-DOPA).The specific capacitance of BCN as an electrode material was 391 F g−1 at a scan rate of 5 mVs−1 by using CV technique and achieved a capacitance of 209 F g−1 at a current density of 2.5 Ag−1 as calculated by CP. Levodopa detection was also carried out using BCN modified carbon paste electrode, it shows a linear range of current response over 0.2–160 μM of L-DOPA concentrations and having a limit of detection of 0.14 μM. Differential pulse votammetry (DPV) response for L-DOPA was very stable even after 2 weeks and observed 92 % of the initial peak current response. L-DOPA detection was also been carried out in spiked human urine samples and the percentage recovery was observed in the range of 98.6 ± 2.1–102.06 ± 2.9 %. From the obtained results, it is clear that BCN serve as a good electrode material in supercapacitors and sensitive electrocatalyst for the analysis of L-DOPA in real samples.

Local structure of amorphous Ag5In5Sb60Te30 and In3SbTe2 phase change materials revealed by X-ray photoelectron and Raman spectroscopic studies

Abstract: Reversible switching between highly resistive (binary “0”) amorphous phase and low resistive (binary “1”) crystalline phase of chalcogenide-based Phase Change Materials is accredited for the development of next generation high-speed, non-volatile, data storage applications. The doped Sb-Te based materials have shown enhanced electrical/optical properties, compared to Ge-Sb-Te family for high-speed memory devices. We report here the local atomic structure of as-deposited amorphous Ag5In5Sb60Te30 (AIST) and In3SbTe2 (IST) phase change materials using X-ray photoelectron and Raman spectroscopic studies. Although AIST and IST materials show identical crystallization behavior, they differ distinctly in their crystallization temperatures. Our experimental results demonstrate that the local environment of In remains identical in the amorphous phase of both AIST and IST material, irrespective of its atomic fraction. In bonds with Sb (∼44%) and Te (∼56%), thereby forming the primary matrix in IST with a very few Sb-Te bonds. Sb2Te constructs the base matrix for AIST (∼63%) along with few Sb-Sb bonds. Furthermore, an interesting assimilation of the role of small-scale dopants such as Ag and In in AIST, reveals rare bonds between themselves, while showing selective substitution in the vicinity of Sb and Te. This results in increased electronegativity difference, and consequently, the bond strength is recognized as the factor rendering stability in amorphous AIST.