Showing papers in "Microelectronic Engineering in 1994"

TL;DR: In this paper, a gray-tone mask was used to shape arbitrary profiles in fused silica substrates, and a high efficiency of 75% was obtained for the lenses with a photolithographic exposure and an etching step; it is realized on conventional equipment and is therefore cost effective.

TL;DR: In this article, the effects of the oxygen partial pressure, substrate temperature and laser wavelength on the structural and optical properties of thin films of ZnO grown on silicon and glass substrates by pulsed laser deposition have been studied.

TL;DR: In this article, two techniques to optimize the quality of multilayer x-ray mirrors are discussed, namely optimization of the temperature of the substrates during deposition and ion-bombardment of the layers.

TL;DR: In this article, a detailed study of etching characteristics as functions of gas composition, rf power, pressure, and self-bias voltage was performed in order to optimize deep trench RIE process.

TL;DR: In this article, a new process for realising three dimensional micro structures is presented, using an UV lithographic process, the patterning of thick resist layers was possible, and structures with high aspect ratios up to ten were performed.

TL;DR: In this article, three-dimensional structures are presented with a field-emission scanning electron microscope dedicated to deposition, which are obtained with a 3D structure with edge corrugations of 2 nm.

TL;DR: In this article, Monte Carlo simulations of 20 μm resist layers on a gold plating base were performed at BESSY I (e c = 0.6 keV ) and ELSA ( e c = 1.4 and 2.5 keV ).

TL;DR: In this article, an application of silicon dry etching for the fabrication of low-pressure sensors, acceleration sensors and silicon cantilevers with integrated deflection sensors for atomic force microscopy is presented.

TL;DR: In this paper, the status of the development of dry etching processes for obtaining very sharp high aspect-ratio Si-tips is discussed, and three etching strategies correspond to different chemistries were used: (i) SF 6 +Ar, (ii)SF 6 +CCl 2 F 2 /Ar and (iii)BCl 3 Cl 2 /Br 2.

TL;DR: A technique for more repeatably and controllably electroplating gold films for use as the absorber on x-ray masks is presented in this paper, where films electroplated from a gold-sulfite based bath containing high concentrations of thallium-based brightener possess low stresses.

TL;DR: In this paper, a resist layer typically PMMA (polymethyl-methacrylate), is patterned by deep etch x-ray lithography and then the exposed parts are dissolved by an organic developer.

TL;DR: The evolution and future potential of optical patterning will be discussed and it can be expected that a production resolution below 0.15 μm can be realized with optical reduction systems.

TL;DR: The Rossendorf Focused Ion Beam IMSA-100 was used for writing implantation of cobalt (E = 30 keV Co + and 60 keV CO ++ ; D = 0.5 … 5 × 10 17 cm -2 ) at room temperature to form CoSi 2 microstructures on silicon by ion beam synthesis as discussed by the authors.

TL;DR: In this paper, a review of Si-based devices is presented, covering growth, layout aspects and device processes, and effects on the device performance are discussed, mainly due to a large lattice mismatch and the requirement of nm-thin layers with atomically sharp junctions.

TL;DR: In this article, a modified cylindrical mirror analyser (CMA) coupled with a quadrupole mass spectrometer (QMS) was used to analyse the energy and mass of the ionic component of the laser ablation plasma generated by 4ns duration frequency doubled Nd: YAG laser (λ=532nm) radiation impinging upon Fe and YBa2Cu3O7-δ targets.

TL;DR: In this article, the authors deal with TFTs that include dual-layer oxide-nitride dielectrics, and either hydrogenated amorphous and/or microcrystalline Si thin films for the channel, and source and drain regions.

TL;DR: In this article, the resolution limit of the inorganic electron beam resist LiF(AlF3) was investigated, and the 3nm lines and spaces were verified in excellent agreement with a theoretical prediction.

TL;DR: A novel ion-beam lithographic process using dry development has been developed in this article, where focused Si++, Be+ and Ga+ ion beams with energies from 130 keV to 30 keV have been used to expose a novolac-based resist.

TL;DR: Detailed simulation models of integrated tools provided a means to evaluate the various performance characteristics as a function of application specific process and equipment parameters in semiconductor manufacturing.

TL;DR: In this paper, a scanning force microscope for measuring ultrafast voltage signals is demonstrated, based on mixing due to the square-law force interaction present between the microscope tip and sample.

TL;DR: In this article, an anisotropic reactive ion etching (RIE) process was developed using SiCl4 for etching GaAs/AlGaAs, using a very thin Al0.3Ga0.7As layer (4 monolayers 1.1 nm thick) served to stop the etching, while maintaining very good anisotropy.

TL;DR: In this paper, the photo-enhanced deposition of silicon oxynitride thin films was investigated using FTIR spectrometry and ellipsometry techniques, showing that very good control of the stoichiometry is achievable with this photoenhanced process with virtually any composition between pure SiO 2 and the Si 3 N 4 being possible.

TL;DR: In this paper, an electron beam lithography tool with a Schottky field emitter source has been designed, which can produce beam diameters between 6 nm and 250 nm, with corresponding currents up to 250 nA at 20, 50 and 100 kV accelerating voltage.

TL;DR: In this article, a 100 KV electron beam lithography (EBL) system was used for octavinylsilsquioxane film characterization as an electron resist for nanometer scale microstructuring.

TL;DR: In this paper, the self-assembly of refractory films on organic resist surfaces is used to provide an etching mask during the plasma transfer of patterns through underlying organic resists.

TL;DR: In this article, a red-emitting (Al)GaInP semiconductor laser diodes with dry-etched mirror facets have been fabricated using chemically assited ion-beam etching.

TL;DR: In this paper, the processes of electron-beam lithography and reactive ion etching of silicon substrates through single-layer positive-tone AZ PF-514 resist were investigated.

TL;DR: In this paper, a combination of electron and ion beam techniques is proposed to solve the physical restrictions of the increasing complexity of todays integrated circuits (IC's) results sometimes in physical restrictions for electron beam probing, leading to increased crosstalk effects.