Showing papers in "Progress in Crystal Growth and Characterization of Materials in 2016"

TL;DR: In this paper, the transition from an indirect to a fundamental direct bandgap material will be discussed, and the most commonly used approaches, i.e., molecular beam epitaxy (MBE) and chemical vapor deposition (CVD), will be reviewed in terms of crucial process parameters, structural as well as optical quality and employed precursor combinations including Germanium hydrides, Silicon hydride and a variety of Sn compounds like SnD4, SnCl4 or C6H5SnD3.

TL;DR: In this paper, a review of the literature on cocrystallization is presented, with a focus on the mechanism of how cocrystals have a solubility advantage over the amorphous form.

TL;DR: In this paper, the fundamental aspects and technological developments involved in SiC bulk and homoepitaxial growth are reviewed, and basic phenomena of defect generation and reduction during SiC epitaxy have been clarified.

TL;DR: In this paper, the electronic and magnetic properties of Heusler compounds are discussed as well as the importance of composition and defect control on tailoring their properties for spintronic applications.

TL;DR: In this paper, the authors introduce the subject of crystal morphology by using three important minerals, calcite, halite and gypsum, as three didactic case studies to illustrate the application of the current knowledge in the field.

TL;DR: In this article, the authors present the latest approaches to issues in chemical vapor deposition (CVD) growth of 2D transition metal dichalcogenides (TMDCs) and provide an outlook on the future of CVD growth of TMDCs.

TL;DR: Aqueous-Solid Solution (AQ-SS) processes have garnered increasing attention from geochemists and environmental engineers because they play major roles in the fate and transport of elements in Earth surface environments as mentioned in this paper.

TL;DR: In this article, in situ liquid phase TEM (LP-TEM) was used to obtain direct evidence for the mechanisms underlying crystallization, as well as dynamic information that provides constraints on important kinetic and thermodynamic parameters not available through ex situ methods.

TL;DR: The III-V semiconductors have been used in a wide range of optical and electronic properties accessed through the formation of multi-component alloys as mentioned in this paper, and their versatility arises from the wide variety of optical properties accessed by the creation of multiphase alloys.

TL;DR: In this article, the conformation flexibility of the protein molecules, leading to the exposure of hydrophobic surfaces and enhanced intermolecular binding, was shown to be the mechanism behind the metastable mesoscopic clusters and crystal nucleation.

TL;DR: In this article, mesostructured crystals are categorized in a new family of crystalline states as intermediate between faceted single crystals and polycrystals that are random arrangements of small grains.

TL;DR: In this paper, the properties and future electronic applications of diamond semiconductors are discussed. And the current understanding of defects such as dislocations and stacking faults is described, and the present status of wafer technology and impurity doping are described.

TL;DR: In this paper, the authors combine two papers, theNobel Lecture: growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation.

TL;DR: An overview of the state of knowledge regarding the atomic layer deposition (ALD) of metal oxides on III-V semiconductor surfaces is provided in this paper, where surface passivation approaches are examined in conjunction with experimental and computational results.

TL;DR: In this article, the authors provide an overview on solid-state wetting, starting from basic concepts, and introducing the useful mathematical paraphernalia, and discuss the similarities and differences between liquid-state and solid state wetting.

TL;DR: In this paper, the principles of obtaining various structural features using low-energy electron microscopy (LEEM) have been explained, and then the status of current understanding on the growth of graphene and hexagonal boron nitride has been reviewed.

TL;DR: In this article, an overview of the important defect types, their origins and interactions during the bulk crystal growth from the melt and selected epitaxial processes is given, and the equilibrium and nonequilibrium thermodynamics, kinetics and interaction principles are considered as driving forces of defect generation, incorporation and assembling.

TL;DR: The traveling solvent technique has been used for the crystal growth of both congruently and incongruently melting materials of many classes of intermetallic, chalcogenide, semiconductor and oxide materials as mentioned in this paper.

TL;DR: In this paper, the BCF theory is introduced for beginners as the basis of modern crystal growth study and the concept of the roughening transition is introduced, which distinguishes the crucial difference of lateral growth of facets and normal growth of round surfaces.

TL;DR: In this article, the authors present a primer on fluid mechanics and convection, followed by a discussion of the physics and scaling of flows in such processes, and discuss specific examples of fluid flows in crystal growth systems.

TL;DR: In this article, the authors focus on the recent developments in Czochralski crystal growth of silicon for large-scale integrated circuits (LSIs) and multi-crystalline silicon growth using a directional solidification method for solar cells.

TL;DR: In this paper, the polymorphism and polymorphic transformation of edible fat crystals, such as chocolate, were studied under optical microscopy and the melting point of each polymorph was determined.

TL;DR: In this article, the potential of recently developed interferometric techniques, such as Phase-Shift Interferometry (PSI) is reviewed with the principle of the optics, and the capability of measuring growth rates of crystals as low as 10−5nm/s (1µm/year) is introduced.

TL;DR: In this paper, the authors present the outline of a practical course on computer simulation that will be given at the 16th International Summer School on Crystal Growth (ISSCG-16), which aims to understand crystal growth processes from the molecular level to the macroscopic level through computer simulations.

TL;DR: In this article, techniques to study such growth interfaces are discussed together with examples of the effect that the properties of the interface can have on the growth of a crystal and its growth medium.

TL;DR: In this paper, the authors show that successive concave-corner-mediated nucleation on the growth front is an important mechanism leading to many long-range ordering effects in crystallization.

TL;DR: In this article, the formation Gibbs free energies of an equilibrium and a non-equilibrium nucleus following Toschev's approach taking a water droplet as an example were calculated. And it was demonstrated that the Gibbs free energy for the formation of a cluster takes the maximum as the cluster radius is increased.

TL;DR: The contents of colloidal crystallization experiments in ISSCG-16 were reported in this paper, where participants produce two kinds of colloid crystals, i.e., close-packed opal type and non-close-packed charged colloidal crystals.

TL;DR: In this paper, the authors demonstrate how thicknesses of crystals can be estimated from interference colors, and show in-situ observations of spiral steps and strain distributions by differential interference contrast microscopy and polarizing microscopy, respectively.

TL;DR: In this article, the principle of interferometers and its applicability to crystal growth can be understood through assembling interferometer and selecting optical components, which are not covered by general textbooks, can be learned.