Proceedings ArticleDOI
10 Bit and 12 Bit data conversion achievements at microwave frequencies on 200GHz SiGeC (Bipolar) and 120GHz 0.18µm BiCMOS technology
Marc Wingender,Francois Bore,N. Chantier,A. Glascott-Jones,Etienne Bouin,Jean-Philippe Amblard +5 more
- pp 53-60
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TLDR
Comparison on such performances as transconductance, speed, matching, noise of bipolar andCMOS transistors are reviewed and compared and the advantages brought by the combination of Bipolar and CMOS technologies are presented.Abstract:
This paper describes design techniques for Bipolar and BiCMOS analog circuits. Comparison on such performances as transconductance, speed, matching, noise of bipolar and CMOS transistors are reviewed and compared. Design achievements such as a single core 12 Bit 1.5GS/s Analog to Digital Converter (ADC) [1] and a single core 12 Bit 3GS/s Digital to Analog Converters (DAC) [2] based on a fully bipolar 200GHz SiGeC technology are introduced to illustrate the advantages and drawbacks of a fully bipolar technology for high speed data converters. A Quad 10 Bit 5GS/s ADC based on 4 interleaved ADC Core designed with a 120 GHz 0.18um BiCMOS technology is also presented, to illustrate the advantages brought by the combination of Bipolar and CMOS technologies.read more
Citations
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Proceedings ArticleDOI
Passive Radar & Signals Intelligence using a 12-bit 4.5GSps BiCMOS Analog to Digital Converter
E. Bouin,Francois Bore,Marc Wingender,G. Wagner,N. Chantier,A. Glascott-Jones,C. Allene,C. Lambert,D. Bellin,G. Jestin +9 more
TL;DR: A new high speed, high resolution Analog to Digital Converter with high input bandwidth which enables the direct RF down conversion up to S-band and allows new perspectives for application such as Passive Radar and Signals Intelligence.
References
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Proceedings ArticleDOI
SiGe bipolar technology for automotive radar applications
Josef Bock,Herbert Schäfer,Klaus Aufinger,R. Stengl,Sabine Boguth,R. Schreiter,M. Rest,Herbert Knapp,Martin Wurzer,W. Perndl,T. Bottner,Thomas Meister +11 more
TL;DR: In this paper, a SiGe bipolar technology for automotive radar applications around 77 GHz has been developed and a cut-off frequency of 200 GHz, a maximum oscillation frequency of 275 GHz, and a gate delay of 35 ps have been obtained.
Proceedings ArticleDOI
A 1.6-GS/s 12-bit return-to-zero GaAs RF DAC for multiple Nyquist operation
TL;DR: A 12-bit 1.6-GS/s digital-to-analog converter (DAC) implemented with 4-/spl mu/m/sup 2/GaAs HBT process is presented in this paper, where return-tozero current switches are added to current steering DAC for high-frequency wideband applications to achieve 800MHz bandwidth at first and second Nyquist band without the need for a reverse sinc equalization filter in wideband transmitter application.
Journal ArticleDOI
Quantization and Saturation Noise Due to Analog-to-Digital Conversion
Glenn A. Gray,Gene W. Zeoli +1 more
TL;DR: In this paper, an analysis of the noise power generated by a saturating A/D converter when the input signal has an assumed Gaussian probability density function was carried out, and two noise powers were found to contribute to the output device noise.
Journal ArticleDOI
An Investigation of Dose Rate and Source Dependent Effects in 200 GHz SiGe HBTs
Akil K. Sutton,A.P.G. Prakash,Bongim Jun,Enhai Zhao,Marco Bellini,Jonathan A. Pellish,R.M. Diestelhorst,M.A. Carts,A. Phan,Raymond L. Ladbury,John D. Cressler,Paul W. Marshall,Cheryl J. Marshall,Robert A. Reed,Ronald D. Schrimpf,Daniel M. Fleetwood +15 more
TL;DR: In this article, the authors investigated variations in the total dose tolerance of the emitter-base spacer and shallow trench isolation oxides in a commercial 200 GHz SiGe HBT technology.
Proceedings ArticleDOI
A 1.2GS/s 15b DAC for precision signal generation
TL;DR: In this paper, a 1.2GS/s 15b DAC achieves untrimmed SFDR of -70dBc to f/sub s/4 and -63 dBc to Nyquist (with 10dB better results at 500MS/s).