Journal ArticleDOI
2.7-eV luminescence in as-manufactured high-purity silica glass.
Ryoichi Tohmon,Yasushi Shimogaichi,Hiroyasu Mizuno,Yoshimichi Ohki,Kaya Nagasawa,Yoshimasa Hama +5 more
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This article is published in Physical Review Letters.The article was published on 1989-03-20. It has received 230 citations till now. The article focuses on the topics: Porous glass & Photoluminescence.read more
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Identification of a Blue Photoluminescent Composite Material from a Combinatorial Library
Jingsong Wang,Young K. Yoo,Chen Gao,Ichiro Takeuchi,Xiao-Dong Sun,Hauyee Chang,Xiao-Dong Xiang,Peter G. Schultz +7 more
TL;DR: Experimental evidence suggests that luminescence in this material may arise from interfacial effects between SiO2 and Gd3Ga5O12, and optimal compositions were identified with the use of gradient libraries, in which the stoichiometry of a material was varied continuously.
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The nature of the trapped hole annealing process
TL;DR: In this article, the authors studied post-irradiation positive-bias reverse annealing of trapped positive charge in MOS oxides as a function of temperature, and found that the ratio of the ratio between the positive bias and negative bias was at least twice as large at room temperature as at elevated temperatures.
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Luminescent Properties of a White Afterglow Phosphor CdSiO3:Dy3+
TL;DR: In this article, Cd1-xDyxSiO3, which emit white color long-lasting phosphorescence upon UV light excitation, are prepared by the conventional high-temperature solid-state method and t...
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Photoluminescence of silicon nanoclusters with reduced size dispersion produced by laser ablation
TL;DR: In this article, a photoluminescence study of silicon nanoclusters produced by laser ablation was conducted and it was found that by varying the preparation parameters it was possible to change the mean cluster size in the range 1-5 nm.
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Strong blue and violet photoluminescence and electroluminescence from germanium-implanted and silicon-implanted silicon-dioxide layers
Lars Rebohle,J. von Borany,Rossen Yankov,Wolfgang Skorupa,Ida E. Tyschenko,Hartmut Fröb,Karl Leo +6 more
TL;DR: In this paper, the photoluminescence (PL) and electroluminecence (EL) properties of Ge-implanted SiO2 layers thermally grown on a Si substrate were investigated and compared to those of Si-implants O2 films.